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Insulated gate bipolar transistor (IGBT) module is one of the most prone-to-fail components in the wind power converter (WPC). The reduction of the junction temperature swing by thermal management can improve the reliability of a WPC. Due to the lack of an applicable selection criterion, not many studies on the control target of junction temperature swing were reported. This article proposes a thermal management strategy to find the control target of junction temperature swing. The proposed strategy considers the return on investment (ROI) of thermal management as a quantitative indicator to guide the control target selection. The selected control target enables optimal benefit of the thermal management. Results show that a 1% increase in the total harmonic distortion would extend the lifetime of IGBT module by 0.144 years. Success of the proposed scheme lies in the efficient regulation of the junction temperature swing. Case studies with different mission profiles and experimental tests on a three-phase two-level inverter are presented to validate the proposed method. [ABSTRACT FROM AUTHOR]

In this article, an online condition monitoring (CM) method is proposed for the bond wire degradation of insulated-gate bipolar transistor (IGBT) modules in a single-phase or three-phase three-level neutral-point-clamped (3LNPC) dc–ac, ac–dc converter. The proposed method has the ability to detect the whole IGBTs in a 3LNPC converter, based on finding the idle on-state IGBTs under the specific load current direction and switching sequence of a leg. The detection time is short (0.2 ms) and the influence of online CM on load current can be completely neglected as long as the insertion areas for CM test are chosen reasonably. Meanwhile, an advanced bond wire CM module is designed to conduct the CM test. This module can generate and inject the current pulse trains into IGBT modules, with the high current for CM test and low current for temperature-sensitive electrical parameter measurement, and sample the collector–emitter on-state voltage (VCE ON) stably and precisely. Finally, the experimental work was carried out to verify the effectiveness of the proposed method and the practicality of the developed CM module. [ABSTRACT FROM AUTHOR]

Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

This paper proposes a thermal network parameter estimation method for insulated-gate bipolar transistor (IGBT) modules using the junction temperature cooling curve. The proposed method finds the RC parameters of a fourth-order Cauer network by establishing a relationship between RC parameters and time constants of junction temperature response curves. Experimental tests are performed to validate the accuracy of the developed method. Results show that the difference of total thermal resistance between the proposed method and IEC standard is below 2%. Advantages of the proposed method over the existing methods are that the proposed method does not need 1) to know the power loss information of IGBT and 2) to heat the IGBT module up to thermal steady state. In addition, we show that the identified RC parameters can be used for condition monitoring and junction temperature estimation. [ABSTRACT FROM AUTHOR]

In this paper, we propose to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature. This method works during the shutoff period of IGBT module where the case temperature is in the cooling phase By establishing the relationship between the Cauer-type thermal RC parameters and the time constants of case temperature cooling curves, thermal parameters of the IGBT module can be identified. The proposed method is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results, which is quite challenging for the current case temperature monitoring methods. Moreover, it enables the detection of thermal resistance and thermal capacitance of the TIM and that of the IGBT module at the same time. Experimental tests are performed to validate the accuracy and feasibility of the proposed method. Moreover, impacts of the junction temperature, case temperature sensing position, and thermal coupling on the monitored results are analyzed. [ABSTRACT FROM AUTHOR]

The junction temperature fluctuation of an insulated-gate bipolar transistor (IGBT) is the most important factor of its aging failure, and smoothing the fluctuation is an effective way to improve the life of an IGBT. The existing methods for smoothing the fluctuation by active junction temperature control are not yet ready wide application, and exploring the different approaches to active junction temperature control is a hot topic. This paper presents a method of active junction temperature control that shifts the turn-off trajectory of an IGBT to adjust the IGBT turn-off loss for smoothing the junction temperature. The relationship between parameters of the adjusting circuit and turn-off loss is analyzed. On the basis of this analysis, a method of estimating the smoothing ability for the proposed active junction temperature control is deduced. Using an IGBT installed in a 1.2-MW direct-drive wind power converter as an example, the evaluation result shows that the proposed method can completely smooth the junction temperature fluctuation caused by a 40% rated load fluctuation. Finally, a low-power experiment is carried out. [ABSTRACT FROM PUBLISHER]

Finding and replacing the defective insulated-gate bipolar transistor (IGBT) module timely by monitoring the ageing state of IGBT can improve the reliability of a power converter and reduce the loss caused by IGBT failure. A method for detecting the condition of bond wires in IGBT module by identifying the short-circuit current of IGBT module is presented in this paper. It is based on the fact that parasitic parameters of IGBT module are affected by the local damage induced by ageing over time, and these changes can be easily detected by monitoring the difference of short-circuit current. The study results indicate that short-circuit current of IGBT module decreases with module ageing over time, and the difference of short-circuit current caused by junction temperature is much smaller than that caused by bond wires fatigue on a specific gate driving voltage. Therefore, the IGBT module in the power converter can be diagnosed by detecting the difference of short-circuit current without considering the effects of junction temperature. Finally, a confirmatory experiment is carried out, and the correctness of the method proposed in this paper is verified. [ABSTRACT FROM AUTHOR]

Insulated-gate bipolar transistor (IGBT) modules and dc-link capacitors are important parts in the majority of power electronic converters which contribute to cost, size, and failure rate on a considerable scale. This paper presents an online condition monitoring method for both IGBT modules and dc-link capacitors of power converters based on short-circuit current of an IGBT module, which is a good condition indicator according to the theory analysis. The failure prediction of dc-Link capacitor is realized by equivalent series resistance, which can be calculated by short-circuit current and a step voltage, and the bond wires fatigue can also be identified by the short-circuit current. The proposed method is capable for detecting small changes in the failure indicators of IGBT modules and electrolytic capacitors, and its effectiveness is validated by a confirmatory experiment. The novelty of the proposed method is that the degradations of IGBT modules and capacitors can be identified simultaneously, and has the merits of low cost and circuit simplicity [ABSTRACT FROM PUBLISHER]