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In order to resolve the issues of RC time delay and high power consumption, IC chips with Cu/low-k interconnects are developed to meet the foregoing requirements. However, there is a high potential that in doing so it may contribute to interfacial cracks occurring or propagating between the copper metal and the low-k dielectric material as a result of poor adhesion and lower fracture toughness, which results from the inherent mechanical imperfection of low-k materials. This fracturing problem is one of the most urgent issues for the thermomechanical reliability of Cu/low-k interconnects, and it needs to be resolved urgently. For this reason, we propose a prediction methodology of finite-element analysis (FEA) based on J-integral value estimation to investigate the interfacial fracture opportunity of low-k packages. However, the J-integral calculation is path dependent and so crucial in FEA for a crack on an interface between dissimilar materials. Therefore, various paths with an integral contour surrounding the crack tip are considered to avoid a misunderstanding of the cracking energy. All the analytic results indicate that a rectangular contour with a proper ratio of length/width, and multilayers of element close to the delaminating surfaces, is suggested for obtaining a stable J-integral value. On the other hand, the proposed methodology has been validated by a four-point bending test and compared with the relative experimental data of multi-low-k dielectric films. Moreover, under a reliable integral contour path that crack driving force predicted using the type of interfacial crack constructed by means of the element death technique, it shows good agreement with the simulated results of embedding actual crack. [ABSTRACT FROM AUTHOR]

(WO3)100−XCX thin films (x \(=\) 0−9.3 at%) were cosputtered on indium-tin-oxide glass substrate with W and C targets by reactive dc magnetron sputtering at room temperature. The effects of doped C on the microstructure and optical properties of the (WO3)100−XCX thin film were examined by field emission scanning electron microscopy with energy dispersive X-ray spectroscopy, X-ray diffraction, and a spectrophotometer. It was found that all of the as-deposited films were amorphous. The average transmittances of bleaching and colored WO3 film in the 400–700 nm range were 75% and 65.9%, respectively. The variation in average transmittance of the bleaching and colored states of (WO3)90.7C9.3 film was 68.3%. The average transmittance of bleaching (WO3)100−XCX thin films did not vary with C doping. However, the average transmittance of colored (WO3)100−XCX film decreased to <48% after C doping. In addition, the optical transmittance contrast of (WO3)100−XCX thin films was found to be suitable for blue laser wavelength recording. [ABSTRACT FROM PUBLISHER]