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Typical perovskite oxides SrTiO3 (STO) and PbZr0.52Ti0.48O3 (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO2, and MgO-buffered GaN. The effects of TiO2 and MgO buffer-layers on the orientations and electric properties of the perovskite films were systematically studied. The crystalline properties were in situ monitored by reflective high energy electron diffraction and ex situ characterized by X-ray diffraction. It was found that the epitaxial temperature of STO and PZT was reduced by inserting a buffer layer. (111)-oriented films were obtained on bare and TiO2-buffered GaN. However, the orientations of the perovskite films were changed to be (110) when deposited on MgO buffer layer. Furthermore, PZT films deposited on MgO- and TiO2-buffered GaN show better electric performance compared with these films directly deposited on GaN. These results show that perovskite oxide could be epitaxially grown on GaN semiconductor substrates by inserting a proper buffer layer. [ABSTRACT FROM PUBLISHER]