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SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as RSP,ON = 8.3 mΩ · cm². DC and transient characteristics are shown. Room and elevated temperature (up to 200 °C) 600V/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns. [ABSTRACT FROM AUTHOR]

In this paper, the stability of n-channel 4H-silicon carbide (SiC) DMOSFETs with junction termination extension (JTE) was assessed by measuring the breakdown voltage (BV) of these devices before and after bias stress at a high temperature. The BY slumped after the DMOSFET was bias stressed at 1200 V for 2 hat 175 °C, and the slumped BY dynamically recovered to the prestress value during the poststress period. Computer simulation suggests that the BV slump and its recovery are dominated by the positive charge trapping/detrapping phenomena at the SiC/field oxide interface in the JTE structure, rather than the trapping/detrapping at the SiC/gate oxide interface in the cell structure. A positive interface charge of approximately one-third of the sheet dopant concentration of the JTE region, lowers BV by 150 V, which is the typical measured BY slump of the DMOSFETs of this paper. [ABSTRACT FROM AUTHOR]

In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from −193 °C (80 K) to 500 °C. Silicon carbide single MOSFETs remained fully operational over a 700-°C wide temperature range and exhibited stable $I$ – $V$ characteristics. The circuits that include operational amplifier (op-amp), 27-stage ring oscillator, and buffer were tested and shown to be functional up to 500 °C with relatively small performance variation between 300 °C and 500 °C. High-temperature evaluation of these circuits confirmed stable operation and survivability of both the ring oscillator and op-amp for more than 100 h at 500 °C. [ABSTRACT FROM AUTHOR]