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23. Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer.

Author

Liu, Po-Tsun, Fan, Yang-Shun, and Chen, Chun-Ching

Subjects
NONVOLATILE random-access memory, HAFNIUM oxide films, ALUMINUM compounds, METAL oxide semiconductors, DOPED semiconductors
Abstract

This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum–zinc–tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments. [ABSTRACT FROM AUTHOR]

Published
2014
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