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In this paper, a simple and nondestructive method of modeling 40-nm interconnects is proposed. Traditional methods based on charge-based capacitance measurement model the interconnects by fitting the capacitance or resistance curves, first by assuming one constant process parameter, such as metal thickness, and then by extracting the metal width, metal spacing, and inter-level dielectric (ILD) thickness from certain test patterns that may therefore result in model inaccuracy while the transmission and scanning electron microscopy methods are both destructive and time consuming. The proposed new methodology directly extracts the metal width based on the metal resistance test structures, and then the metal thickness, metal spacing, and ILD thickness without any presumption. It is also nondestructive and fast, with a model accuracy higher than 95%. Furthermore, with the ensured accuracy of layout parameter extraction, the necessity of an accurate interconnect model in the 40 nm technology and beyond is emphasized. [ABSTRACT FROM AUTHOR]

An interesting hydrogen sensor based on an Al0.24Ga0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications. [ABSTRACT FROM PUBLISHER]

Pd/InGaP hydrogen sensors based on the metal-oxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H2/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices. [ABSTRACT FROM PUBLISHER]

The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10[sup -12] to 10[sup -1] A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10[sup -12] A (1.56 × 10[sup -7] A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications. [ABSTRACT FROM AUTHOR]

Investigates the performance of several III-V compound semiconductor devices. Significance of higher temperature tolerance in semiconductor devices; List of their weakpoints with regards to temperature increase.

Presents information on a study that examined a double ion-implant Ti-salicide technology for high-performance complementary metal oxide semiconductor devices. Background on Ti-salicide technology; Methodology of the study; Results and discussion.

Describes the fabrication and analysis of a Pt/oxide/In[sub0.49]Ga[sub0.51]P metal-oxide-semiconductor Schottky diode hydrogen sensor. Steady-state and transient responses with different hydrogen concentrations and at different temperatures; Effects of the presence of dipoles at the oxide layer; Roles of hydrogen adsorption and desorption for the transient response at different temperatures.