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For better understanding of the essential removal mechanisms of brittle material and stress distribution at high speed and ultrasonic elliptical vibration assisted cutting conditions at the atomic level, the single crystal silicon, expected as a next generation semiconductor material for wide band cap, high-voltage and low-loss power devices, MEMS components and so on, is analyzed by molecular dynamics computer simulation for its nanometer behavior through cutting force and subsurface stress distribution in the condition of similar ultrasonic elliptical vibration cutting. In this simulation, the cutting tool is assumed to be one of rigid single crystal diamond. The atomic behavior in a plane corresponding to Silicon (100) plane is simulated for dealing with a plane strain problem where the three-dimensional effect of inter-atomic force is considered. The results show that the cutting forces varies following a similar sinusoid different from the conventional cutting and the atomic layers below the machined surface are deformed and have residual stress.