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InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 $\mu \text{m}$ and a −3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 $\mu \text{m}$ diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance. [ABSTRACT FROM AUTHOR]

Monolithic integration of antimonide (Sb)-based compound semiconductors on Si is in high demand to enrich silicon photonics by extending the detection range to longer infrared wavelengths. In this paper, we have demonstrated the damage-free transfer of large-area (1×1 cm 2) narrow-bandgap Sb-based type-II superlattice (T2SL)-based thin-film materials onto a Si substrate using a combination of wafer-bonding and chemical epilayer release techniques. An array of Sb-based T2SL-based long-wavelength infrared (LWIR) photodetectors with diameters from 100 to 400 μm has been successfully fabricated using standard "top-down" processing technique. The transferred LWIR photodetectors exhibit a cut-off wavelength of ~8.6 μm at 77 K. The dark current density of the transferred photodetectors under 200 mV applied bias at 77 K is as low as 5.7×10 -4 A/cm 2 and the R×A reaches 66.3 Ω·cm 2, exhibiting no electrical degradation compared with reference samples on GaSb native substrate. The quantum efficiency and peak responsivity at 6.75 μm (@77 K, 200 mV) are 46.2% and 2.44 A/W, respectively. The specific detectivity (D*) at 6.75 μm reaches as high as 1.6×10 11 cm·Hz1/2 /W under 200 mV bias at 77 K. Our method opens a reliable pathway to realize high performance and practical Sb-based optoelectronic devices on a Si platform. [ABSTRACT FROM AUTHOR]