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We propose a generalized T-matrix definition that facilitates the conversion between the S-parameter and T-parameter for multiport networks based on the well understood and mathematically simple two-port relations. This approach generalizes all multiport networks into two cases: balanced and unbalanced. Balanced networks have the same number of en- trance and exit ports and are symmetric to the two-port network. Unbalanced networks generate a nonsquare T-matrix and do not have the same number of entrance and exit ports. Through careful selection of the T-matrix, this method extends two-port symmetry to multiport networks and provides an engineering implementable relationship between the S-parameter and T-parameter for multiport networks. This symmetry extension allows a practical means to cascade and deembed such networks. [ABSTRACT FROM AUTHOR]

A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate. [ABSTRACT FROM AUTHOR]