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Piezoelectric micromachined ultrasound transducer (PMUT) matrix arrays were fabricated containing novel through-silicon interconnects and integrated into intracardiac catheters for in vivo real-time 3-D imaging. PMUT arrays with rectangular apertures containing 256 and 512 active elements were fabricated and operated at 5 MHz. The arrays were bulk micromachined in silicon-on-insulator substrates, and contained flexural unimorph membranes comprising the device silicon, lead zirconate titanate (PZT), and electrode layers. Through-silicon interconnects were fabricated by depositing a thin-film conformal copper layer in the bulk micromachined via under each PMUT membrane and photolithographically patterning this copper layer on the back of the substrate to facilitate contact with the individually addressable matrix array elements. Cable assemblies containing insulated 45-AWG copper wires and a termination silicon substrate were thermocompression bonded to the PMUT substrate for signal wire interconnection to the PMUT array. Side-viewing 14-Fr catheters were fabricated and introduced through the femoral vein in an adult porcine model. Real-time 3-D images were acquired from the right atrium using a prototype ultrasound scanner. Full 60? ? 60? volume sectors were obtained with penetration depth of 8 to 10 cm at frame rates of 26 to 31 volumes per second. [ABSTRACT FROM AUTHOR]

One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible mass-manufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application. [ABSTRACT FROM PUBLISHER]