Search

Your search keyword '"Guitard, Nicolas"' showing total 13 results
Start Over Author "Guitard, Nicolas" Publisher ieee
13 results on '"Guitard, Nicolas"'

2. Recovery of Intrinsic Heterojunction Bipolar Transistors Profiles by Neural Networks

Author

Caron, Grégoire, Juditsky, Anatoli, Guitard, Nicolas, Celi, Didier, ST Microélectronics, ST Microélectronic, Données, Apprentissage et Optimisation (DAO), Laboratoire Jean Kuntzmann (LJK), Institut National de Recherche en Informatique et en Automatique (Inria)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE, and ANR-19-P3IA-0003,MIAI,MIAI @ Grenoble Alpes(2019)

Subjects
[STAT]Statistics [stat], [SPI]Engineering Sciences [physics]
Abstract

International audience; Due to the shrinking size of devices, the calibration process for TCAD simulators is becoming increasingly complex with time mandatory to run simulations steadily increasing. In this work, we propose a Statistical Learning approach to predicting Figures of Merit (FoMs) of a Silicon Germanium Heterojunction bipolar transistor (HBT) 1D doping and germanium profile. The surrogate model thus built allows to simulate electrical outputs with high precision much faster than traditional simulations. This model is then used to solve the inverse design problem and recover profiles that match target FoMs.

Published
2022

7. Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Author

Joblot, Sylvain, primary, Duru, Romain, additional, Guitard, Nicolas, additional, Lu, Vincent, additional, Nassiet, Thomas, additional, Beneyton, Remi, additional, Cristiano, Fuccio, additional, Dabertrand, Karen, additional, Borrel, Julien, additional, Juhel, Marc, additional, Arevalo, Edwin, additional, Monsieur, Frederic, additional, Borowiak, Celine, additional, Ghegin, Elodie, additional, Clement, Laurent, additional, Oudot, Evan, additional, Rideau, Denis, additional, Zou, Wei, additional, and Pinzelli, Luc, additional

Published
2018
Full Text
View/download PDF

9. Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology.

Author

Galy, Philippe, Bourgeat, Johan, Guitard, Nicolas, Lise, Jean-Daniel, Marin-Cudraz, David, and Legrand, Charles-Alexandre

Subjects
ELECTROSTATIC discharges, SILICON-controlled rectifiers, SILICON-on-insulator technology, COMPLEMENTARY metal oxide semiconductors, COMPUTER-aided design
Abstract

The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge (ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with a dual back-to-back silicon-controlled rectifier (SCR) for bulk and for ultrathin body box fully depleted (FD)-silicon on insulator (SOI) advanced CMOS technologies in the hybrid bulk thanks to process co-integration. It is well known that ESD protection is a challenge for IC in advanced CMOS technology. In this paper, an optimized solution is described through the concept, design, 3-D technology computer aided design (TCAD) simulation, and silicon characterization in 28-nm FD-SOI in hybrid bulk. Measurements are done thanks to transmission line pulsed (TLP), very fast TLP and dc behavior. Moreover, the overvoltage is investigated through very fast transient characterization system measurements. It demonstrates a promising candidate to protect against ESD event and to develop new ESD network dedicated to system on chip. [ABSTRACT FROM PUBLISHER]

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results