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Muscle weakening is a common consequence of stroke and can result in a reduction in physical activity of the affected body part. Therapy includes a range of physical exercises that will help the patients restore and build physical strength, endurance, flexibility, balance, and stability. In order to analyze and recognize the activity and movement of hands while performing these exercises, we have developed a $4\times4$ flexible pressure sensor matrix to quantize the performance and progress of a patient undergoing physiotherapy. We have also developed an artificial intelligence (AI) based algorithm to determine the accuracy of positioning by the patients. Experimental results demonstrate that the algorithm gives a mean error of 0.103 cm in detecting the position of load, compared to a mean error of 0.704 cm using mathematical analysis. With this system, a patient can be asked to move a weight to a particular location (as part of regular physiotherapy) and the pressure sensor matrix can be used to calculate error in positioning along with the time taken to complete the task. Advantages of the proposed pressure sensor matrix are cost effectiveness, facile fabrication, high sensitivity, robustness and flexibility. [ABSTRACT FROM AUTHOR]

The state-of-the-art electronics technology has been an integral part of modern advances. The prevalent rise of the mobile device and computational technology in the age of information technology offers exciting applications that are attributed to sophisticated, enormously reliable, and most mature CMOS-based electronics. We are accustomed to high performance, cost-effective, multifunctional, and energy-efficient scaled electronics. However, they are rigid, bulky, and brittle. The convolution of flexibility and stretchability in electronics for emerging Internet of Everything application can unleash smart application horizon in unexplored areas, such as robotics, healthcare, smart cities, transport, and entertainment systems. While flexible and stretchable device themes are being remarkably chased, the realization of the fully compliant electronic system is unaddressed. Integration of data processing, storage, communication, and energy management devices complements a compliant system. Here, a comprehensive review is presented on necessity and design criteria for freeform (physically flexible and stretchable) compliant high-performance CMOS electronic systems. [ABSTRACT FROM AUTHOR]

We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage. [ABSTRACT FROM AUTHOR]

High-performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for the Internet of Everything applications. While semiconducting oxides, such as zinc oxide (ZnO), present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT, which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it with the conventional planar architecture. The WC architecture circuits have shown $2\times $ higher peak-to-peak output voltage for the same input voltage. They also have $3\times $ lower high-to-low propagation delay times, respectively, when compared with the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field-effect mobility due to higher gate field electrostatics control. [ABSTRACT FROM PUBLISHER]

Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in \(3.5\times \) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \(1.8\times \) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. [ABSTRACT FROM PUBLISHER]