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The fabrication of nanometer-scale features such as quantum dots and quantum wires, in a controllable and economically viable manner is one of essential requirements for the production of highly functional devices. Here, we propose a new electron beam projection lithography technique for patterning nanometer scale, periodic structures. The novelty of this technique is that the crystalline lattice image observed by high resolution transmission electron microscopy (HRTEM) is employed as the ultimate mask to define nanometer scale pattern. Namely, the Angstrom-scale lattice image of a crystalline material is magnified within the electron microscope, and is projected onto an electron-beam-resist-coated substrate. This technique is tentatively called AIPEL (atomic image projection electron-beam lithography).

We present a method for the formation of sub-10 nm scale silicide dots by applying e-beam energy. Our process demonstrates a hybrid approach which combines the "top down approach" -defining the area in which the dots are formed -and "bottom up approach" -which enables the formation of high density sub-10 nm scale dots below the resolution limit of e-beam patterning - in a single step process.