118 results on '"Inaba S"'
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2. Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
3. Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs
4. Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG
5. Origin of “current-onset voltage” variability in scaled MOSFETs
6. Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
7. Plasma doping and spike annealing technique for steep SDE formation in nano-scale MOSFET
8. Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling
9. Impact of tantalum composition in TaC/HfSiON gate stack on device performance of aggressively scaled CMOS devices with SMT and strained CESL
10. Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using takeuchi plot
11. Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond
12. Record-high performance 32 nm node pMOSFET with advanced Two-step recessed SiGe-S/D and stress liner technology
13. FinFET Process and Integration Technology for High Performance LSI in 22 nm node and beyond
14. R-1: Navigating the Roadmap to 32nm and Beyond: Breaking the Barriers
15. Beam dignosis devices of a high power proton beam line facility
16. High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
17. Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
18. FinFET: the prospective multi-gate device for future SoC applications
19. Guideline for Low-temperature-operation Technique to Extend CMOS Scaling
20. Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET.
21. Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼.
22. Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond.
23. Performance report of micro-gap wire chamber in KEK PS E248 AIDA experiment.
24. Development of residual gas ionization profile monitor for high intensity proton beams.
25. Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension.
26. Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length.
27. Error evaluation of C-V characteristic measurements in ultra-thin gate dielectrics.
28. Low power logic circuit and SRAM cell applications with silicon on depletion layer CMOS (SODEL CMOS) technology.
29. Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si1-xGex virtual substrate.
30. High-resolution Cardo polymer dielectric "VPA-series".
31. Silicon on Depletion Layer FET (SODEL FET) for sub-50 nm high performance CMOS applications: novel channel and S/D profile engineering schemes by selective Si epitaxial growth technology.
32. High performance 30 nm bulk CMOS for 65 nm technology node (CMOS5).
33. Device performance of sub-50 nm CMOS with ultra-thin plasma nitrided gate dielectrics.
34. 65 nm CMOS technology (CMOS5) with high density embedded memories for broadband microprocessor applications.
35. Threshold-voltage anomaly in sub-0.2 μm DRAM buried-channel pFET devices.
36. A novel 0.15 /spl mu/m CMOS technology using W/WNx/polysilicon gate electrode and Ti silicided source/drain diffusions.
37. Multi-agent CAMAC Crate Controller With Trident 32-bit Transputers.
38. Readout Electronics Of Multi-anode Photomultiplier Tubes For Scintillation Fiber Calorimeter.
39. Development Of Monolithic Time-to-amplitude Converter For High Precision Tof Measurement.
40. Modular Construction Of A Balloon-borne Apparatus.
41. Production of NbTi CICC's for SST-1 Project at IPR.
42. Impact of BOX scaling on 30 nm gate length FD SOI MOSFET.
43. An experience and effect of FMS in machine factory.
44. Multi-agent CAMAC crate controller with Trident 32-bit transputers.
45. A remote console system for balloon borne experiments.
46. Low power ADC with fast zero suppression for balloon-borne experiment.
47. Real-time data processes in a balloon-borne apparatus.
48. Development of a monolithic constant fraction discriminator.
49. A flash ADC system with fast data compression for a balloon-borne experiment.
50. Development of monolithic time-to-amplitude converter for high precision TOF measurement.
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