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1. Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2

5. Reliability challenges in Forksheet Devices: (Invited Paper)

13. Degradation mapping of IGZO TFTs

19. Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

21. Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

24. Understanding and modelling the PBTI reliability of thin-film IGZO transistors

25. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

26. Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks

27. Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper

29. Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

32. Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

42. Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

43. Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

44. Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET

47. Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P – V and I – V in HfO₂-Based Ferroelectric FET.

48. Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics.

50. New Insights into the Imprint Effect in FE-HfO2 and its Recovery

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