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A small-size on-chip transformer-based digital isolator for power control systems is proposed. With a proposed pulse generation and detection scheme that enables a 5 V standard CMOS transistor to utilize GHz-band signals, transformer area is reduced to 1/4–1/8 that of conventional transformers. A test chip achieves a 2.5 kV isolation voltage, a 35 kV/us CMR, a 1.6 mA static current and a 250 Mbps data rate, all which are equal to or superior to those of optocouplers or conventional digital isolators. The developed technology greatly reduces the number of chips in power control systems by allowing integration of multiple isolators in a CMOS chip together with microcontrollers or gate drivers. Moreover, the high-speed low-power capability expands the application potential to include isolated serial links, controller area network (CAN), FlexRay, medical devices, displays, sensors, etc. [ABSTRACT FROM PUBLISHER]

A fully integrated 40 Gb/s transmitter and receiver chipset with SFI-5 interface is implemented in a 65 nm CMOS technology and mounted in a plastic BGA package. The transmitter chip provides good jitter performance with a 40 GHz full-rate clock architecture that alleviates pattern-dependent jitter and eliminates duty cycle dependence. The measured RMS jitter on the output is 570 fs to 900 fs over the range of 39.8 Gb/s to 44.6 Gb/s with a 231-1 PRBS pattern. The receiver chip operates over the range of 37 Gb/s to 41 Gb/s. The measured RMS jitter on the recovered clock is 359 fs to 450 fs. By taking advantage of CMOS technology, each chip achieves low power consumption of 2.8 W and full integration of SFI-5 functions, PRBS generators/error checkers, a DPSK precoder/decoder, and control interfaces in a 4.9 × 5.2 mm² die. [ABSTRACT FROM AUTHOR]

In this paper, a reconfigurable LSI employing a non- volatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-µm CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated. [ABSTRACT FROM AUTHOR]