1. Recrystallization and oxidation - competing processes during PECVD ultrathin silicon layer high temperature annealing
- Author
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Romuald B. Beck and Kamil Ber
- Subjects
010302 applied physics ,Thermal oxidation ,Amorphous silicon ,Materials science ,Silicon ,business.industry ,Annealing (metallurgy) ,Metallurgy ,Nanocrystalline silicon ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Monocrystalline silicon ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Optoelectronics ,Crystalline silicon ,LOCOS ,0210 nano-technology ,business - Abstract
In this work we have studied relations between three competing effects that take place during high temperature annealing of PECVD ultrathin silicon layer, namely: amorphous silicon recrystallization, amorphous silicon oxidation and oxidation of just received crystalline silicon in the first few minutes of this process. Understanding very complex relations between these kinetics is essential to allow for conscious manipulating of annealing and/or oxidation parameters in order to achieve different results, depending on the application in mind. The presented below results are, to our knowledge, the first attempt to address these issues.
- Published
- 2016
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