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3. A 0.5µm Pixel 3-layer Stacked CMOS Image Sensor with Deep Contact and In-pixel Cu-Cu Bonding Technology

17. Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications

18. On the universality of drain-induced-barrier-lowering in field-effect transistors

19. 3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch

34. A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology

38. Lateral Vehicle Trajectory Planning Using a Model Predictive Control Scheme for an Automated Perpendicular Parking System.

39. A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

44. $\text{In}_{x}\text{Ga}_{1-x}\text{As}$ quantum-well high-electron-mobility transistors with a record combination of $\mathrm{f}_{\mathrm{T}}$ and $\mathrm{f}_{\max}$: From the mobility relevant to ballistic transport regimes

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