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2. 13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

18. A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface

26. An overview of the ITER electron cyclotron H&CD system

32. Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials

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