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23 results on '"Kong, Qiwen"'

2. First BEOL-compatible IGZO Ferroelectic-Modulated Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and Deep Understanding

Author

Jiao, Leming, primary, Zhou, Zuopu, additional, Zheng, Zijie, additional, Han, Kaizhen, additional, Kong, Qiwen, additional, Wang, Xiaolin, additional, Xu, Haiwen, additional, Zhang, Jishen, additional, Sun, Chen, additional, Kang, Yuye, additional, Liang, Gengchiau, additional, and Gong, Xiao, additional

Published
2023
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8. New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling

Author

Kong, Qiwen, primary, Liu, Gan, additional, Sun, Chen, additional, Zheng, Zijie, additional, Zhang, Dong, additional, Zhang, Jishen, additional, Xu, Haiwen, additional, Liu, Long, additional, Zhou, Zuopu, additional, Jiao, Leming, additional, Wang, Xiaolin, additional, Han, Kaizhen, additional, Kang, Yuye, additional, Nguyen, Bich-Yen, additional, Ni, Kai, additional, and Gong, Xiao, additional

Published
2022
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9. Novel a-IGZO Anti-Ferroelectric FET LIF Neuron with Co-Integrated Ferroelectric FET Synapse for Spiking Neural Networks

Author

Sun, Chen, primary, Wang, Xiaolin, additional, Xu, Haiwen, additional, Zhang, Jishen, additional, Zheng, Zijie, additional, Kong, Qiwen, additional, Kang, Yuye, additional, Han, Kaizhen, additional, Jiao, Leming, additional, Zhou, Zuopu, additional, Chen, Yue, additional, Zhang, Dong, additional, Liu, Gan, additional, Liu, Long, additional, and Gong, Xiao, additional

Published
2022
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10. Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and Modeling

Author

Wang, Xiaolin, primary, Sun, Chen, additional, Zheng, Zijie, additional, Jiao, Leming, additional, Zhou, Zuopu, additional, Zhang, Dong, additional, Liu, Gan, additional, Kong, Qiwen, additional, Zhang, Jishen, additional, Xu, Haiwen, additional, Han, Kaizhen, additional, Kang, Yuye, additional, Liu, Long, additional, and Gong, Xiao, additional

Published
2022
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11. First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs

Author

Kong, Qiwen, primary, Liu, Long, additional, Zheng, Zijie, additional, Sun, Chen, additional, Kumar, Annie, additional, Shao, Rui, additional, Zhou, Zuopu, additional, Jiao, Leming, additional, Zhang, Jishen, additional, Xu, Haiwen, additional, Chen, Yue, additional, Liu, Gan, additional, Zhang, Dong, additional, Wang, Xiaolin, additional, Nguyen, Bich-Yen, additional, and Gong, Xiao, additional

Published
2022
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14. Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)

Author

Wang, Chengkuan, primary, Kumar, Annie, additional, Han, Kaizhen, additional, Sun, Chen, additional, Xu, Haiwen, additional, Zhang, Jishen, additional, Kang, Yuye, additional, Kong, Qiwen, additional, Zheng, Zijie, additional, Wang, Yuxuan, additional, and Gong, Xiao, additional

Published
2022
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15. First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

Author

Zhang, Jishen, primary, Xu, Haiwen, additional, Tan, Kian Hua, additional, Wicaksono, Satrio, additional, Kong, Qiwen, additional, Zhang, Gong, additional, Chen, Yue, additional, Sun, Chen, additional, Wang, Haibo, additional, Wang, Chao, additional, Zheng, Zijie, additional, Jiao, Leming, additional, Zhou, Zuopu, additional, Lim, Charles Ci Wen, additional, Yoon, Soon-Fatt, additional, and Gong, Xiao, additional

Published
2022
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16. First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit

Author

Chen, Yue, primary, Zhang, Gong, additional, Zhou, Jiuren, additional, Zheng, Zijie, additional, Jiao, Leming, additional, Wang, Haibo, additional, Zhou, Zuopu, additional, Kumar, Annie, additional, Zhang, Jishen, additional, Wang, Yuxuan, additional, Kong, Qiwen, additional, Sun, Chen, additional, and Gong, Xiao, additional

Published
2022
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18. First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection

Author

Zhang, Jishen, primary, Xu, Haiwen, additional, Zhang, Gong, additional, Chen, Yue, additional, Wang, Haibo, additional, Tan, Kian Hua, additional, Wicaksono, Satrio, additional, Wang, Chao, additional, Sun, Chen, additional, Kong, Qiwen, additional, Wen Lim, Charles Ci, additional, Yoon, Soon-Fatt, additional, and Gong, Xiao, additional

Published
2021
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19. Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory.

Author

Sun, Chen, Han, Kaizhen, Samanta, Subhranu, Kong, Qiwen, Zhang, Jishen, Xu, Haiwen, Wang, Xinke, Kumar, Annie, Wang, Chengkuan, Zheng, Zijie, Yin, Xunzhao, Ni, Kai, and Gong, Xiao

Subjects
ASSOCIATIVE storage, FIELD-effect transistors, FERROELECTRIC polymers, PHOTONIC band gap structures, RANDOM access memory, RELIABILITY in engineering
Abstract

We demonstrate nonvolatile and area-efficient ternary content-addressable memories (TCAMs) featuring amorphous indium–gallium–zinc–oxide (a-IGZO) ferroelectric field-effect transistors (FeFETs) with excellent electrical characteristics. An extremely large sensing margin of the TCAM array is achieved due to the large current ON/OFF ratio ($I_{ \mathrm{\scriptscriptstyle ON}}/I_{ \mathrm{\scriptscriptstyle OFF}})$ of the a-IGZO FeFETs. Our HfxZr $_{\text {1-x}}\text{O}$ 2 (HZO)-based a-IGZO FeFETs have a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. By engineering the area ratio of the ferroelectric layer (${A}_{Fe}$) and the metal–oxide–semiconductor layer (${A}_{MOS}$), a large memory window (MW) of 2.9 V is realized. Reliability test results, including retention, endurance, and positive bias temperature instability, show long-term retention of more than ten years and high endurance of 108 cycles. In addition, by scaling the channel length down to 40 nm, ON current of $77 ~\mu \text{A}/ \mu \text{m}$ (${V}_{\mathrm{GS}} - {V}_{\mathrm{TH}}$ = 5 V and ${V}_{\mathrm{DS}}$ = 2 V) and ${I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}}$ of more than eight orders can be obtained for the ultrascaled a-IGZO FeFETs while maintaining an MW of 2.8 V. [ABSTRACT FROM AUTHOR]

Published
2022
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20. Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity

Author

Xu, Haiwen, primary, Zhang, Jishen, additional, Lima, Lucas P B, additional, Margetis, Joe, additional, Khazaka, Rami, additional, Xie, Qi, additional, Tolle, John, additional, Wang, Chengkuan, additional, Wang, Haibo, additional, Zhou, Zuopu, additional, Kong, Qiwen, additional, and Gong, Xiao, additional

Published
2020
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21. Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics.

Author

Zhou, Zuopu, Jiao, Leming, Zhou, Jiuren, Kong, Qiwen, Luo, Sheng, Sun, Chen, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Liu, Gan, Liang, Gengchiau, and Gong, Xiao

Subjects
DYNAMIC models, TUNNEL design & construction, DATA warehousing
Abstract

Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing. [ABSTRACT FROM AUTHOR]

Published
2022
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22. Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors.

Author

Han, Kaizhen, Kong, Qiwen, Kang, Yuye, Sun, Chen, Wang, Chengkuan, Zhang, Jishen, Xu, Haiwen, Samanta, Subhranu, Zhou, Jiuren, Wang, Haibo, Thean, Aaron Voon-Yew, and Gong, Xiao

Subjects
*INDIUM gallium zinc oxide, *ATOMIC layer deposition, *METAL semiconductor field-effect transistors, *FIELD-effect transistors, *TRANSISTORS, *NANOWIRES, *ISOPROPYL alcohol
Abstract

We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors ($\alpha $ -IGZO NW-FETs) featuring an ultrascaled nanowire width (${W}_{{\mathrm {NW}}}$) down to ~20 nm. The device with 100 nm channel length (${L}_{{\mathrm {CH}}}$) and ~25 nm ${W}_{{\mathrm {NW}}}$ achieves a decent subthreshold swing (SS) of 80 mV/dec as well as high peak extrinsic transconductance (${G}_{m,{\mathrm {ext}}}$) of $612~\mu S/\mu \text{m}$ at a drain–source voltage (${V}_{{\mathrm {DS}}}$) = 2 V ($456~\mu S/\mu \text{m}$ at ${V}_{{\mathrm {DS}}}$ = 1 V). The good electrical properties are enabled by using an ultrascaled 5 nm high- ${k}$ HfO2 as the gate dielectric, a water-free ozone-based atomic layer deposition (ALD) process, and a novel digital etch (DE) technique developed for indium-gallium-zinc-oxide (IGZO) material. By using low-power BCl3-based plasma treatment and isopropyl alcohol (IPA) rinse in an alternating way, the DE process is able to realize a cycle-by-cycle etch with an etching rate of ~1.5 nm/cycle. The scaling effects on device performance have been analyzed as well. It shows that the downscaling of ${W}_{{\mathrm {NW}}}$ improves the SS notably without sacrificing ON-state performance, and the shrinking of ${L}_{{\mathrm {CH}}}$ boosts the ${G}_{m,{\mathrm {ext}}}$. The ultrascaled $\alpha $ -IGZO NW-FETs could play an important role in applications where high performance and high density are highly desired. [ABSTRACT FROM AUTHOR]

Published
2021
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23. Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure.

Author

Sun, Chen, Zheng, Zijie, Han, Kaizhen, Samanta, Subhranu, Zhou, Jiuren, Kong, Qiwen, Zhang, Jishen, Xu, Haiwen, Kumar, Annie, Wang, Chengkuan, and Gong, Xiao

Subjects
TRANSISTORS, THIN film transistors, SEMICONDUCTORS, CARRIER density, HIGH temperatures, THRESHOLD voltage
Abstract

We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide (${a}$ -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our ${a}$ -IGZO FeTFTs have a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) stru- cture with Zr-doped HfO2 (HZO) as the ferroelectric layer. Characteristics of ${a}$ -IGZO FeTFTs are investigated in the temperature range of −40 °C to 100 °C. We found that: Firstly, the remanent polarization (${P}_{\text {r}}$) of the HZO film increases with $2{P}_{\text {r}}$ from $\sim 35~ {\mu }\text{C}$ /cm2 at −40 °C to $\sim 40~ {\mu }\text{C}$ /cm2 at 100 °C. Secondly, enhancement in MWs at high temperatures is observed, achieving MWs larger than 3.5 V when the temperature is higher than 60 °C. Thirdly, for the threshold voltage (${V}_{\text {TH}}$) at high temperatures, there is a competition between the negative shift caused by higher carrier concentration in the ${a}$ -IGZO channel and positive shift due to the charge trapping at the floating gate in the MFMIS structure. This could be explored to realize good ${V}_{\text {TH}}$ stability. [ABSTRACT FROM AUTHOR]

Published
2021
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