18 results on '"Kumar, Annie"'
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2. Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)
3. First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit
4. Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory.
5. Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure.
6. Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter
7. Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs.
8. Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length.
9. First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems
10. Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity.
11. GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/V•s
12. Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal
13. High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS
14. Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate
15. The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
16. Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate.
17. MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS.
18. Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate.
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