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2. Aspects of type-II superlattice infrared detectors: Minority carrier lifetimes and conductivity effective masses

Author

Ting, David Z., primary, Hoglund, Linda, additional, Soibel, Alexander, additional, Khoshakhlagh, Arezou, additional, Keo, Sam A., additional, Fisher, Anita M., additional, Rafol, Sir B., additional, Luong, Edward M., additional, Hill, Cory J., additional, Mumolo, Jason M., additional, Liu, John K., additional, Pepper, Brian J., additional, and Gunapala, Sarath D., additional

Published
2017
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3. Type-II superlattice unipolar barrier infrared detectors

Author

Ting, David Z., primary, Soibel, Alexander, additional, Hoglund, Linda, additional, Khoshakhlagh, Arezou, additional, Hill, Cory J., additional, Keo, Sam A., additional, Rafol, Sir B., additional, Fisher, Anita M., additional, Luong, Edward M., additional, Mumolo, Jason M., additional, Liu, John K., additional, Pepper, Brian J., additional, and Gunapala, Sarath D., additional

Published
2016
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4. InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb.

Author

Ting, David Z., Rafol, Sir B., Keo, Sam A., Nguyen, Jean, Khoshakhlagh, Arezou, Soibel, Alexander, Hoglund, Linda, Fisher, Anita M., Luong, Edward M., Mumolo, Jason M., Liu, John K., and Gunapala, Sarath D.

Abstract

We report focal plane array (FPA) results on a mid-wavelength InAs/InAsSb type-II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 μm. For 300 K background in the 3–5-μm band, f/2 aperture, an FPA operating at 150 K exhibits a mean noise equivalent differential temperature (NEDT) of 18.5 mK, and an NEDT operability of 99.7%. The NEΔT distribution has a width of 8 mK, with no noticeable distribution tail, indicating excellent uniformity. The mean noise-equivalent irradiance is 9.1 × 1011 photons/sec-cm2. The mean quantum efficiency is 49.1% without antireflection coating, and the mean specific detectivity (D*) is 2.53 × 1011 cm-Hz½/W. Benefitting from an absorber material with a much longer Shockley–Read–Hall minority carrier lifetime, and a device architecture that suppresses generation-recombination and surface-leakage dark current, the InAs/InAsSb T2SLS barrier infrared detector FPA has demonstrated a significantly higher operating temperature than the mid-wavelength infrared market-leading InSb. [ABSTRACT FROM AUTHOR]

Published
2018
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