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The Mercury imaging X-ray spectrometer (MIXS) on board of ESA's fifth cornerstone mission BepiColombo will be the first space instrument using DEpleted P-channel FET (DEPFET) based detectors. The MIXS spectrometer comprises two channels with identical focal plane detectors and is dedicated to energy resolved imaging of X-ray fluorescence from the mercurial surface. [ABSTRACT FROM PUBLISHER]

DEPFET detectors are silicon (Si) active pixel sensors designed and manufactured in the Max-Planck-Institut semiconductor lab. Their high spatial resolution and high energy resolution in X-rays make them attractive for particle tracking in colliders and for X-ray astronomy. This technology is foreseen for the Wide Field Imager of the International X-ray Observatory currently in study with ESA, NASA, and JAXA. New DEPFET matrixes with 256\,\times\,256 pixels of 75-\mum pitch have been produced, mounted on ceramic boards with dedicated front-end electronics and integrated in a new setup able to acquire large-format images and spectra. Excellent homogeneity has been observed. Energy resolution as low as 127 eV FWHM at 5.9 keV has been obtained including all single events of the matrix back illuminated at -45\,^\circC and read out at a 300-frames/s rate. This paper presents experimental methods and results. [ABSTRACT FROM AUTHOR]

The Mercury Imaging X-ray Spectrometer (MIXS) is one of the instruments on board the Mercury Planetary Orbiter of the fifth European Space Agency (ESA) cornerstone mission Bepi- Colombo. This spectrometer comprises two instruments and allows imaging X-ray spectroscopy of the Mercurian surface. The focal plane arrays for the energy and spatial resolved detection of X-rays are based on depleted P-channel FET (DEPFET) macropixel detectors. We report on the first electrical qualification measurements of DEPFET macropixel flight hardware, which are done at room temperature. The measurement of the transistor properties of all DEPFET pixels allows the selection of 100% electrically defect-free devices at an early stage directly after completion of the production process. Additionally, these measurements allow to investigate topics such as the homogeneity of transistor parameters across the detector matrix, to monitor die-to-die variations for matrices from the same wafer, and to investigate the differences between dies from different wafers in order to learn about the stability and reproducibility of the production process. The test results demonstrate good homogeneity and yield for the investigated detector matrices from the first production batch. [ABSTRACT FROM AUTHOR]

A diode irradiation with 10-MeV protons was performed to measure the silicon current related damage rate at a temperature of -50°C. This measurement was fundamental to predict the performance of the detectors which will be used in the X-ray spectrometers of the Simbol-X and BepiColombo space missions. These detectors consist of arrays of large area silicon drift chambers with integrated depleted p-channel field effect transistors. The leakage current increase due to radiation damage and its consequent energy resolution degradation can be critical for these missions, specially for BepiColombo. These effects cannot be predicted because, during the whole missions, the sensors will be kept at temperatures below -40°C, and the existing models are based on measurements on structures which underwent annealing at higher temperatures. An irradiation experiment was performed to measure the current related damage rate at -50°C, and the obtained value was (11.1 ± 0.2) x 10-17 A/cm. This result implies that it will be possible to achieve the Simbol-X energy resolution, whereas some annealing strategies will be needed for the BepiColombo mission. The annealing behaviour at 60°C was studied as well and the results are in agreement with the already available measurements. [ABSTRACT FROM AUTHOR]

In this work we demonstrate theoretically and experimentally the capability to reduce the readout noise of an optical and X-ray photon detector based on the semiconductor DEPFET device below a level of only 0.3e- ENC (equivalent noise charge). The readout method used is called "Repetitive Non Destructive Readout" (RNDR) and was realized by placing two single DEPFET-devices next to each other and by coupling their charge storing region by an additional gate. By transferring the stored charge from one DEPFET to the other and vice versa the same charge can be measured non-destructively and arbitrarily often. Taking the average value of a large number n of these measurements, the noise is reduced by 1/√n The main advantage of such a detector is to greatly reduce the contribution of the 1/f noise to the readout noise. The theoretically and experimentally achievable resolution for different operating parameters (leakage current, readout noise, number and duration of readouts) was investigated by Monte-Carlo simulations and verified on a real RNDR minimatrix (pixelarray). Single optical photon detection with high quantum efficiency and, even more fascinating, the possibility to distinguish between different numbers of photons, e.g., 100 from 101 are demonstrated in measurements. [ABSTRACT FROM AUTHOR]

We discuss the silicon photomultiplier as a novel photon detector for the Major Atmospheric Gamma Imaging Cerenkov Telescope and the Extreme Universe Space Observatory. For these astroparticle experiments we pursue two different developments of the SiPM. One development is pursued at MEPhI, where prototypes are available. In the course of this paper we will describe some characteristics of these devices. The second development, which is using the back illumination principle is at present in its design phase. [ABSTRACT FROM AUTHOR]

A concept for single optical photon detection promises high quantum efficiency and large area sensitivity while restricting the avalanche region to a very narrow ("point-like") region of the device. This is accomplished by combining the principle of drift diode with an avalanche structure situated close by the electron collection electrode on the wafer surface opposite to the large area radiation entrance window placed on the fully depleted bulk. Extensive simulations demonstrate the validity of this concept. [ABSTRACT FROM AUTHOR]

Presents a study that investigated the post-irradiation performance of silicon detectors designed for use in the airborne tunable laser absorption spectrometer at the Large Hadron Collider of the European Laboratory for Particle Physics in Geneva, Switzerland. Examination of currents during and after irradiation; Analysis of capacitance after irradiation; Assessment of signal and noise after irradiation.