1. Response of silicon photomultipliers directly exposed to X-ray fluxes
- Author
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L. Tosti, Emanuele Fiandrini, Maria Ionica, Leonello Servoli, M. Caprai, G. Ambrosi, and Valerio Vagelli
- Subjects
Photon ,Materials science ,Physics::Instrumentation and Detectors ,010308 nuclear & particles physics ,business.industry ,Astrophysics::High Energy Astrophysical Phenomena ,X-ray ,Radiation ,01 natural sciences ,030218 nuclear medicine & medical imaging ,Ionizing radiation ,03 medical and health sciences ,0302 clinical medicine ,Optics ,Silicon photomultiplier ,0103 physical sciences ,Irradiation ,business ,Intensity (heat transfer) ,Beam (structure) - Abstract
Silicon photomultipliers are commonly used to detect the passage of radiation in matter via the collection of photons produced by the ionizing radiation in converting materials. We investigated the possibility of direct detection of high-intensity X-ray fluxes using the measurement of the current produced by silicon photomultipliers directly exposed to the X-ray beam, in absence of any converter material. We have analyzed the response of different devices directly exposed to the radiation produced by an X-ray tube. The signal-to-noise ratio of the response confirms that the current produced during the irradiation provides information on the X-ray flux intensity. We parametrize the current response of SiPM devices as function of the X-ray flux intensity. We verify that the parametrization is accurate down to the % level and we study the linearity of the response to investigate the prospects for possible applications in real-time X-ray beam monitoring and beam spatial profiling.
- Published
- 2019
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