1. Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters
- Author
-
Mamun Bin Ibne Reaz, Anis Nurashikin Nordin, Muhammad Ibn Ibrahimy, and M.J. Uddin
- Subjects
Engineering ,business.industry ,Impedance matching ,Electrical engineering ,Filter capacitor ,law.invention ,Capacitor ,Film capacitor ,law ,Return loss ,Insertion loss ,Power dividers and directional couplers ,business ,Electrical impedance - Abstract
Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18µm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z 1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S 21 = 2.47dB. Return loss S 11 and S 22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.
- Published
- 2010