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We perform magnetoresistance (MR) measurements to experimentally track magnetic domain wall pinning/depinning process in L-shaped Permalloy (Py) nanostructures with widths in the range 50–400 nm. We demonstrate that the field interval between the pinning/depinning events increases with the reduction of the nanowire width. The most reproducible measurements are obtained from the narrowest devices. MR measurements reveal that the stochastic contribution to pinning/depinning processes is higher when the applied field is oriented symmetrically with respect to both arms of the device. The interpretation of experimental results is supported by micromagnetic simulations. [ABSTRACT FROM AUTHOR]

This paper uses a linear transformer model to investigate the effect of the lift-off on the results of the thickness measurement of nonferromagnetic metallic plates. The transformer model previews that the time derivative of the magnetization curves obtained for different gaps between the excitation coil and the plate should intercept in a single point when low magnetic coupling factors are considered. To assess the validity of the model, results are compared with experimental data obtained with a giant magnetoresistive sensor probe. For comparison, the sensor output voltage time derivative must be performed as well. The similarity of the theoretical model results and those obtain experimentally with pulsed excitation, confirms the correctness of the transformer approach. [ABSTRACT FROM PUBLISHER]

Modulation of the sub-band electron population in the inversion channel of 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of inversion layer transport parameters. Two distinct inversion-layer electron species were detected by magnetic-field-dependent magnetoresistance measurements and high-resolution mobility spectrum analysis. According to self-consistent Poisson-Schrödinger calculations, these species correspond to carriers in distinct sub-bands within the Si channel region. The mobility peak of the carrier with the highest sheet density occurs under gate bias conditions that result in a minimum perpendicular effective electric field. [ABSTRACT FROM AUTHOR]