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Progress in the design of field effect transistor on hetero-structure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/InxGa1-xN hetero-structure is prepared to have both thickness ~50 ?m and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 ?m gate length and 17 ?m gate width. The technological methods used in the preparation of the FET structure are described. The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1 ? 2.4 V for n-channel MOS and in range ?3.3 ? ?3.4 V for p-channel MOS. Also it is found that the drain current varies in the range ~ 7 ?A if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well.