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Your search keyword '"Mayer, T. S."' showing total 10 results
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10 results on '"Mayer, T. S."'

4. Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

Author

Mohata, D. K., primary, Bijesh, R., additional, Zhu, Y., additional, Hudait, M. K., additional, Southwick, R., additional, Chbili, Z., additional, Gundlach, D., additional, Suehle, J., additional, Fastenau, J. M., additional, Loubychev, D., additional, Liu, A. K., additional, Mayer, T. S., additional, Narayanan, V., additional, and Datta, S., additional

Published
2012
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10. Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors.

Author

Sarpatwari, K., Awadelkarim, O. O., Passmore, L. J., Ho, T.-T., Kuo, M.-W., Dellas, N. S., Mayer, T. S., and Mohney, S. E.

Abstract

We report on the application of the charge-pumping (CP) technique to vapor–liquid–solid grown silicon nanowire (SiNW) transistors. We use an \Omega gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry. [ABSTRACT FROM PUBLISHER]

Published
2011
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