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Wideband receiver (RX) and transmitter (TX) RF front-ends for wireless universal radio applications are presented. The RX is comprised of a two-stage low-noise amplifier (LNA) applying feedback and shunt peaking, a combiner buffer for performance boosting, and an inverter-based in-phase/quadrature (IQ) down-conversion mixer. The wideband LNA provides input matching of better than -\ 10 dB from dc to beyond 10 GHz. The conversion gain (CG) of the RX front-end has a peak value of 31 dB with a 3-dB bandwidth up to 9 GHz. The minimal noise figure is 6 dB and kept below 9 dB within the entire operational bandwidth. The RX has a linearity in terms of intermodulation distortion of better than -\12 dBm. The direct conversion TX involving inverter-based IQ modulator and Darlington-type pre-power amplifier features operation up to 9 GHz with 10-dB mean CG and an average output power of 4 dBm at 1-dB compression level. Excluding buffers and local oscillator generation, the RX and TX dissipate 54 and 84 mW, respectively, from a 1.2-V voltage supply. The circuit prototypes have been fabricated in a standard 65-nm CMOS low-power process without any additional RF options and occupy an area of only 0.77 \ mm^2 and 0.53 \ mm^2, respectively. [ABSTRACT FROM PUBLISHER]

A WiMediaI/MBOA compliant RF transceiver for ultra-wideband data communication in the 3-5-GHz band is presented. The transceiver includes receiver, transmitter and synthesizer is completely integrated in 0.13-µm standard CMOS technology. The receiver uses a feedback-based low-noise amplifier (LNA) to obtain an RF gain of 4 to 37 dB and an overall measured noise figure of 3.6 to 4.1 dB over the 3-5-GHz band of interest. The transmitter supports an error vector magnitude (EVM) of -28 dB up to -4 dBm output power and meets the FCC and WiMedia mask specifications. The power consumption from a single supply voltage of 1.5 V is 237 mW for the receiver and 284 mW for the transmitter, both including the synthesizer. [ABSTRACT FROM AUTHOR]

Develops a state-space behavioral model for complementary metal oxide semiconductors class E power amplifiers. Design of amplifiers; Use of state-space equations; Derivation of the power balance of the power amplifier; Design of switched power amplifiers.

Presents the use of Complementary Metal Oxide Semiconductors (CMOS) for integration of a Radio Frequency (RF) transceiver front-end. Attempts of producing single-chip CMOS RF circuits for cellular applications; Discussion of fundamental pitfalls and limitations of RF CMOS; Emphasis on optimizing transceiver as a single block.