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Characteristics of p-n junction fabricated by aluminum-ion (Al[sup +] or boron-ion (B[sup +]) implantation and high-dose Al[sup +]-implantation into 4H-SiC (0001) have been investigated. By the combination of high-dose (4 × 10[sup 15] cm[sup -2]) Al[sup +] implantation at 500 °C and subsequent annealing at 1700 °C, a minimum sheet resistance of 3.6 kΩ/... (p-type) has been obtained. Three types of diodes with planar structure were fabricated by employing Al[sup +] or B[sup +] implantation. B[sup +]-implanted diodes have shown higher breakdown voltages than Al[sup +]-implanted diodes. A SiC p-n diode fabricated by deep B[sup +] implantation has exhibited a high breakdown voltage of 2900 V with a low on-resistance of 8.0 mΩcm² at room temperature. The diodes fabricated in this study showed positive temperature coefficients of breakdown voltage, meaning avalanche breakdown. The avalanche breakdown is discussed with observation of luminescence. [ABSTRACT FROM AUTHOR]

Presents information on a study which investigated the effects of surface defects on the performance of 4H- and 6H-silicon carbide p-n junction diodes. Diode fabrication; Results and discussion; Conclusions.