1. Resistive switching characteristics of Ag2Se thin film
- Author
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Young Jin Choi, Tae-Sik Yoon, Nam Joo Lee, C.J. Kang, and Mi Ra Park
- Subjects
Semiconductor thin films ,Resistive touchscreen ,Materials science ,Atomic force microscopy ,business.industry ,Nanotechnology ,chemistry.chemical_compound ,chemistry ,Electrical resistivity and conductivity ,Resistive switching ,Selenide ,Optoelectronics ,Voltage range ,Thin film ,business - Abstract
Electrical properties of silver selenide (Ag 2 Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from โ7 to +7 V at room temperature. In addition, the Ag/Ag 2 Se/Au structure was compared with the Ag 2 Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag 2 Se thin film were presented, and the mechanism was discussed.
- Published
- 2012
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