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For the 2022 IEEE VR 3DUI contest on the topic of “Arts, Science, Information and Knowledge - visualization and interactions”, we present Artana, an immersive application proposing to explore anamorphosis in various interactive ways. Through an unexpected experience, the user is transported to a museum in which he/she will have access to the history of anamorphosis before being able to experience seven examples of them. A teleportation and a spinning wheel interaction techniques were implemented in Artana to ease interaction without altering the experience.

In this work, a novel imaging photoluminescence-based metrology method is introduced, with potential application to buried defect detection in silicon devices during semiconductor manufacturing process. The theoretical and practical aspects are both discussed. A new metrology tool was realized and thoroughly tested through real-life semiconductor samples to reveal the capabilities of the suggested method. According to the results, defects down to the sub-micron size range can be optically detected, as confirmed by cross-sectional transmission electron microscopy images.

This work studies the impact of the increasing penetration of routing apps on road usage. Its conclusions apply both to manned vehicles in which human drivers follow app directions, and unmanned vehicles following shortest path algorithms. To address the problem caused by the increased usage of routing apps, we model two distinct classes of users, one having limited knowledge of low-capacity road links. This approach is in sharp contrast with some previous studies assuming that each user has full knowledge of the network and optimizes his/her own travel time. We show that the increased usage of GPS routing provides a lot of benefits on the road network of Los Angeles, such as decrease in average travel times and total vehicle miles traveled. However, this global increased efficiency in urban mobility has negative impacts as well, which are not addressed by the scientific community: increase in traffic in cities bordering highway from users taking local routes to avoid congestion.

This paper presents a study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin Silicon Germanium (SiGe) epitaxial layers doped with Boron. A specifically-designed set of wafers was processed and measured by different in-line metrology tools and characterization techniques. This study describes the best strategy for combining metrology techniques in order to reliably determine dopant concentration and Ge composition measurement of the layers. It demonstrates that combined metrology enables key improvements in manufacturing and engineering environments.

This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layers. MBIR correlation to comparative techniques is demonstrated on multiple wafer sets, including product wafers on bulk silicon and FD-SOI (Fully Depleted Silicon On Insulator) substrates. The results obtained demonstrate that MBIR is a suitable measurement technique for the in-line monitoring of doping for epitaxial SiGe:B and SiC:P layers.

This paper presents recent results obtained applying the Model Based Infrared Reflectometry (MBIR) technique as an in-line monitoring technique for high aspect ratio structures. The paper will focus on the description of the metrology development and itsimplementation in a manufacturing environment for the particular case of few microns Deep Trench Isolatio n (DTI) structures. The technique is demonstrated to be robust method for the in-line geometry control of etched structures. Experimental data relating to high aspect ratio Through Silicon Via (TSV) structures will be presented as well. The results confirm that the technique is very sensitive to the geometry even for small Via of diameter down to 3 microns.