221 results on '"Ohno, H."'
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2. High-Performance Shape-Anisotropy Magnetic Tunnel Junctions down to 2.3 nm
3. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
4. First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
5. Nonvolatile Memory Devices With Magnetic Nanowires Controlled by Spin-Transfer and Spin-Orbit Torques
6. High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.
7. Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer
8. An artificial neural network with an analogue spin-orbit torque device
9. Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design
10. Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer.
11. 10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
12. Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure
13. Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements
14. Three-terminal spintronics memory devices with perpendicular anisotropy
15. Diffusion behaviors observed on the surface of CoFeB film after the natural oxidation and the annealing
16. Proposal and demonstration of a new spin-orbit torque induced switching device
17. Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm
18. Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque
19. Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
20. 20-nm magnetic domain wall motion memory with ultralow-power operation
21. A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop
22. Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements.
23. Gold nanoparticle-based biofuel cell using insect body fluid circulation
24. Development of 3D-stacked reconfigurable spin logic chip using via-last backside-via 3D integration technology
25. Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating
26. Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition.
27. Driving Force in Diffusion and Redistribution of Reducing Agents During Redox Reaction on the Surface of CoFeB Film.
28. 1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times
29. Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture
30. Ultrafast parallel reconfiguration of 3D-stacked reconfigurable spin logic chip with on-chip SPRAM (SPin-transfer torque RAM)
31. High-speed and reliable domain wall motion device: Material design for embedded memory and logic application
32. Insect-mountable biofuel cell with self-circulation system
33. Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme
34. A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching
35. Biofuel cells with trehalose leading to an insect-implanted power source
36. Decision-making system for orthodontic treatment planning based on direct implementation of expertise knowledge
37. A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions
38. Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond
39. The ε-ARK Device Family for the Emergency Situations
40. A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM
41. MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues
42. SPRAM (SPin-transfer torque RAM) Technology for Green IT World
43. A novel SPRAM (SPin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor
44. TMR Design Methodology for SPin-Transfer Torque RAM (SPRAM) with Nonvolatile and SRAM Compatible Operations
45. SPRAM (SPin-transfer torque RAM) design and its impact on digital systems
46. A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion
47. Above room-temperature operation of InAs/AlSb quantum cascade lasers
48. 2Mb SPRAM Design: Bi-Directional Current Write and Parallelizing-Direction Current Read Schemes Based on Spin-Transfer Torque Switching
49. Thermal Stress Simulation for HV Inverter Module
50. 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
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