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In this article, the effect of the dead-time on a single-phase wireless power transfer (WPT) system is studied in detail. In practice, the dead-time is always placed between the complementary switching pulses of the inverter phase-leg. At higher operating frequencies, the dead-time issues in the resonant inverter become critical, especially as the power level increases. The detailed analysis of the dead-time on a WPT system is discussed for different operating conditions of the inverter duty-cycle and power factor. The switching characteristics of the WPT system inverter are analyzed, and the notch phenomenon that appears at the output of the inverter is also discussed. A notch equation based on the observations is derived to predict the notch occurrence during the system operation. Furthermore, the mathematical expressions are presented for different notch conditions. Subsequently, the effect of the notches on the sensitivity and the power transfer of the series–series compensated WPT system is analyzed. Finally, the approach is verified experimentally on an 8-kW WPT system prototype, and the results are compared with the theoretical analysis. [ABSTRACT FROM AUTHOR]

The transition to electric road transport technologies requires electric traction drive systems to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe, i.e., miles per gallon of gasoline-equivalent), extended range, and fast-charging options. The enhanced electrification and transformed mobility are translating to a demand for higher power and more efficient electric traction drive systems that lead to better fuel economy for a given battery charge. To accelerate the mass-market adoption of electrified transportation, the U.S. Department of Energy (DOE), in collaboration with the automotive industry, has announced the technical targets for light-duty electric vehicles (EVs) for 2025. This article discusses the electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance. The emerging materials and technologies for power electronics and electric motors are presented, identifying the challenges and opportunities for even more aggressive designs to meet the need for next-generation EVs. Some innovative drive and motor designs with the potential to meet the DOE 2025 targets are also discussed. [ABSTRACT FROM AUTHOR]

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. This article presents a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on-state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs. [ABSTRACT FROM AUTHOR]

This article presents a systematic power stage design approach for a high-power density air-cooled inverter, which involves the utilization of emerging 1.7 kV silicon carbide (SiC) mosfet bare die engineering samples, heatsinks optimized with genetic algorithm, and built using three-dimensional printing technology and integrated power modules with a novel packaging structure. The developed air-cooled inverter assembly is mainly composed of the SiC mosfet phase leg modules with split high-side and low-side switch submodules, which are attached to two separate heatsinks for increased heat dissipation area and reduced thermal resistance. The heatsink is designed using a co-simulation environment with finite element analysis in COMSOL and genetic algorithm in MATLAB. The primary design procedure, including bare die device characterization, loss calculation, thermal evaluation, and power module development, is elaborated. The proposed design approach is verified and validated through experiments at each stage of development. The experimental results show that the inverter California Energy Commission efficiency is 98.4%, and a power density of 75 W/in3 is achieved with a sufficient junction temperature margin for semiconductor long-term reliability. [ABSTRACT FROM AUTHOR]

Heatsink design is critical for power density and reliability enhancement of power semiconductor modules. In this letter, an automated design and optimization methodology for air-cooled heatsinks are proposed based on genetic algorithm and finite element analysis. While the genetic algorithm generates a population of candidates with complex heatsink cross-section geometry in each iteration, finite element analysis is used to evaluate the fitness function of individual heatsink, i.e., junction temperature of semiconductor devices. With the rule of “survival of the fittest,” the proposed methodology eventually converges to an optimum heatsink design with the lowest device junction temperature. The optimized heatsink is fabricated through three-dimensional printing technology for thermal performance evaluation. Simulation and experimental evaluations have been conducted based on a 50-kW three-phase air-cooled inverter with the fabricated heatsinks. The comparative evaluation results show that the optimized heatsink is superior over a customized solution by 27% less in size and 6% lower in junction temperature. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper. [ABSTRACT FROM AUTHOR]