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31 results on '"Rodgers, M."'

1. In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Author

Ji, B. L., primary, Li, H., additional, Ye, Q., additional, Gausepohl, S., additional, Deora, S., additional, Veksler, D., additional, Vivekanand, S., additional, Chong, H., additional, Stamper, H., additional, Burroughs, T., additional, Johnson, C., additional, Smalley, M., additional, Bennett, S., additional, Kaushik, V., additional, Piccirillo, J., additional, Rodgers, M., additional, Passaro, M., additional, and Liehr, M., additional

Published
2015
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3. Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

Author

Ang, K.-W., primary, Majumdar, K., additional, Matthews, K., additional, Young, C. D., additional, Kenney, C., additional, Hobbs, C., additional, Kirsch, P. D., additional, Jammy, R., additional, Clark, R. D., additional, Consiglio, S., additional, Tapily, K., additional, Trickett, Y., additional, Nakamura, G., additional, Wajda, C. S., additional, Leusink, G. J., additional, Rodgers, M., additional, and Gausepohl, S. C., additional

Published
2012
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7. Performance and variability in multi-VT FinFETs using fin doping

Author

Akarvardar, K., primary, Young, C. D., additional, Veksler, D., additional, Ang, K.-W, additional, Ok, I., additional, Rodgers, M., additional, Kaushik, V., additional, Novak, S., additional, Nadeau, J., additional, Baykan, M., additional, Madan, H., additional, Hung, P. Y., additional, Ngai, T., additional, Stamper, H., additional, Bennett, S., additional, Franca, D., additional, Rao, M., additional, Gausepohl, S., additional, Majhi, P., additional, Hobbs, C., additional, Kirsch, P., additional, and Jammy, R., additional

Published
2012
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8. Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling

Author

Ngai, T., primary, Hobbs, C., additional, Veksler, D., additional, Matthews, K., additional, Ok, I., additional, Akarvardar, K., additional, Ang, K. W., additional, Huang, J., additional, Rodgers, M. P., additional, Vivekanand, S., additional, Li, H., additional, Young, C., additional, Majhi, P., additional, Gausepohl, S. C., additional, Kirsch, P., additional, and Jammy, R., additional

Published
2012
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11. 300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique

Author

Ang, K.-W., primary, Barnett, J., additional, Loh, W.-Y., additional, Huang, J., additional, Min, B.-G., additional, Hung, P. Y., additional, Ok, I., additional, Yum, J. H., additional, Bersuker, G., additional, Rodgers, M., additional, Kaushik, V., additional, Gausepohl, S., additional, Hobbs, C., additional, Kirsch, P. D., additional, and Jammy, R., additional

Published
2011
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12. Plasma doping of silicon fin structures

Author

Felch, S., primary, Hobbs, C., additional, Barnett, J., additional, Etienne, H., additional, Duchaine, J., additional, Rodgers, M., additional, Bennett, S., additional, Torregrosa, F., additional, Spiegel, Y., additional, and Roux, L., additional

Published
2011
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13. Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

Author

Ok, I., primary, Akarvardar, K., additional, Lin, S., additional, Baykan, M., additional, Young, C. D., additional, Hung, P.Y., additional, Rodgers, M. P., additional, Bennett, S., additional, Stamper, H. O., additional, Franca, D. L., additional, Yum, J., additional, Nadeau, J. P., additional, Hobbs, C., additional, Kirsch, P., additional, Majhi, P., additional, and Jammy, R., additional

Published
2010
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14. Enhanced performance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node

Author

Ok, I., primary, Young, C. D., additional, Loh, W. Y., additional, Ngai, T., additional, Lian, S., additional, Oh, J., additional, Rodgers, M. P., additional, Bennett, S., additional, Stamper, H. O., additional, Franca, D. L., additional, Lin, S., additional, Akarvardar, K., additional, Smith, C., additional, Hobbs, C., additional, Kirsch, P., additional, and Jammy, R., additional

Published
2010
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25. Effects of Water on the Aging and Radiation Response of MOS Devices.

Author

Batyrev, I. G., Rodgers, M. P., Fleetwood, D. M., Schrimpf, R. D., and Pantelides, S. T.

Subjects
*COMPLEMENTARY metal oxide semiconductors, *IONIZING radiation, *IRRADIATION, *ELECTRONIC circuits, *SEMICONDUCTORS, *GATE array circuits, *LOGIC devices, *LOGIC design, *ELECTRONICS
Abstract

We report theoretical calculations and new controlled-humidity-and-temperature experiments to elucidate the role of water molecules in the aging of MOS devices. These assist in the interpretation of ionizing radiation-response experiments, namely the increase of interface trap density in aged devices as a function of irradiation and subsequent positive-bias annealing. First-principles calculations are used to demonstrate the existence of a low-energy configuration of a water molecule, bonded within the network. The complex has two silanol (Si-O-H) groups, from which H+ can be released when holes are available, as is the case under radiation. Migration of H+ to the Si-SiO2 interface then leads to depassivation of dangling bonds, i.e., an increase in interface trap density. Radiation-response measurements performed on samples exposed to elevated humidity and temperature conditions prior to irradiation exhibit a markedly greater increase in interface trap density than pre-baked control samples. We further report Monte Carlo simulations of proton transport in SiO2, showing that H+ builds up at the interface. The complex processes of depassivation and passivation by H+ are then modeled by differential rate equations. The final simulation results are in accord with the data. [ABSTRACT FROM AUTHOR]

Published
2006
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26. The Effects of Aging on MOS Irradiation and Annealing Response.

Author

Rodgers, M. P., Fleetwood, D. M., Schrimpf, R. D., Batyrev, I. G., Wang, S., and Pantelides, S. T.

Subjects
*IRRADIATION, *OXIDES, *WATER, *MOLECULES, *RADIATION, *PROPERTIES of matter, *SEMICONDUCTORS, *DENSITY functionals, *METHODS engineering
Abstract

We find that, after approximately 17 years of room-temperature storage, the irradiation and annealing responses of poly-Si-gate nMOS transistors can change significantly. For devices with 32 nm gate oxides that were stored in a nonhermetic environment, the magnitude of the threshold-voltage rebound during postirradiation annealing is much larger now than in previous tests on devices from the same wafer and packaging lot in 1988. These changes in threshold-voltage shifts during storage are primarily due to a more than 50% increase in interface-trap generation during irradiation and annealing. When these parts are baked before irradiation, the aging-related increase in threshold-voltage shift is reduced significantly. Water molecules absorbed in the device are likely candidates for causing aging-related degradation in a nonhermetic environment, so we investigated the properties of H2O in amorphous SiO2 using first-principles quantum-mechanical calculations based on density functional theory. We find a complex with energy that is 0.3 eV smaller than interstitial H2O, with an activation energy of formation of <1.5 eV. These results may help to account for the enhanced interface-trap buildup. Devices from the same lot with 60 nm oxides stored in hermetically sealed packages showed a ∼25 % increase in interface-trap generation as compared to 1988 results. The increase in threshold-voltage rebound in nonhermetically stored devices is larger than standard testing margins, e.g., in MIL-STD 883, Test Method 1019. These results reinforce the importance of allowing for changes in radiation response with aging and temperature when performing hardness assurance testing of MOS and linear bipolar devices, especially for low-dose-rate applications in which hermeticity cannot be guaranteed. [ABSTRACT FROM AUTHOR]

Published
2005
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