1. A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications
- Author
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Rafel Perello-Roig, Salvador Barcelo, Jaume Verd, Sebastia Bota, and Jaume Segura
- Subjects
CMOS-MEMS oscillator ,transimpedance amplifier (TIA) ,Lab-on-Chip (LoC) ,ASIC ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
This article presents a fully differential tunable high-gain transimpedance amplifier (TIA) conceived as a front-end circuit for monolithic CMOS-MEMS resonators operating in self-sustained oscillation mode. The proposed solution is based on a capacitive-feedback network topology by means of a varactor for gain control. The design is specifically oriented to CMOS-MEMS biosensing applications that require post-CMOS MEMS processing since the adoption of a TIA solution provides robustness against one of such processing steps (i.e., oxygen plasma activation) and a $10\times $ improvement in feedthrough signal elimination compared to a single-ended alternative. The ASIC was fabricated using a 0.35- $\mu $ m commercial CMOS technology from Austria Microsystems featuring a maximum transimpedance gain of 164 dB $\Omega $ with a 10-dB tuning range. It operates at frequencies up to 10 MHz with an input-referred current noise density as low as 13 fA $\cdot $ Hz $^{\mathrm {-1/2}}$ providing an exceptional high-performance sensing. With a 3.3 V supply voltage, it exhibits a 1.6 mW power consumption. The TIA was integrated on-chip with various MEMS resonator topologies, either oriented to volatile organic compounds (VOCs) detection or to microfluidics integration for Lab-on-Chip (LoC) systems, corroborating self-sustained oscillation with a 135-ppb measured Allan deviation and 1.1 V output voltage swing.
- Published
- 2024
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