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In recent years, treatment approach of malignant neoplasm (cancer), which has high death ratio, has been actively studied. There are several current cancer therapy as radiation therapy, surgical therapy, and chemotherapy (anticancer drugs), but these therapy have some disadvantages. The purpose of this study was to establish a new cancer therapy, using nanosecond pulsed electric fields (nsPEFs), with the less disadvantages. The pulse-application experiments were carried out with mouse melanoma cells: B16-F10. 2ns-PEFs and 14ns-PEFs were applied on cell suspension in an electroporation cuvette. The 2ns-PEFs-applied cancer cells surviving fraction in suspension measured with WST-1 assay was not different to that of controls. The surviving fraction of 14ns-PEFs-applied cancer cells was measured with WST-1 assay and crystal violet assay. The cancer cells surviving fraction decreased as the number of pulses increased in comparison with controls. In addition, 2ns-PEFs were applied on solid tumors obtained by embryonic chick assay. Although the weight of 15000-pulses-applied tumor was smaller than that of control, weight of 300-pulses-applied tumor was larger than control.

The bio probe is expected to measure electrical and physical information of cells. This paper presents novel bio probe device in order to improve efficiency of extra and intra cellular measurement. The device consists of a needle type probe integrated with a novel operating mechanism. The operating mechanism allows self-alignment between a probe and a cramped cell. The self-alignment mechanism can reduce difficulties in manipulating instruments such as a glass capillary in conventional methods. MEMS technology can provide distributed bio probe devices in batch. Design and fabrication of proposed device are followed by experimental results with P19 embryonal carcinoma cells.

Effects of micro-gap electrode on dilute Cl/sub 2/ gas sensing properties have been investigated for the In/sub 2/O/sub 3/thin film microsensors. The micro-gap electrodes with various gap size (0.1-2 /spl mu/m ) were fabricated on SiO/sub 2//Si substrate by means of MEMS techniques (photolithography and FIB). Then the In/sub 2/O/sub 3/ thin film was deposited on the electrode to be micro gas sensor. The resistance of In/sub 2/O/sub 3/ microsensor was increased upon exposure to dilute Cl/sub 2/ gas of ppm-level, while the sensor responded to Cl/sub 2/ gas less than 0.5 ppm with resistance decrease. Interestingly, in both cases the sensitivities were increased with decreasing gap size. The high sensitivity was obtained for In/sub 2/O/sub 3/ microsensor with 0.1 /spl mu/m gap. The behavior was explained by the large contribution of interface between electrode and oxide at small gap and the high sensitivity at interface.

Deep Submergence Vehicle Shinkai 6500, owned and operated by Independent Administrative Institution Japan Agency for Marine-Earth Science and Technology (hereafter JAMSTEC, and JAMSTEC was reorganized from Japan Marine Science and Technology Center on April 1, 2004), is the deepest manned submersible in the world. Shinkai 6500 has a depth capability of 6500 m and was developed in 1989 by JAMSTEC, and Mitsubishi Heavy Industries, Ltd. (hereafter MHI). She was commissioned in 1990 with her exclusive support vessel "YOKOSUKA" (length overall; 105 m, gross tonnage; 4,436 GT). Shinkai 6500 has dived 811 times until the end of March 2004. The major dives were carried out in the East Pacific Raise, the Mid Atlantic Ridge, the Indian Ocean and the western Pacific region, including the Mariana Trench and the Japan Trench. She has achieved many fruitful and important scientific results for the science in the world. The original power source of Shinkai 6500 was oil filled pressure compensated silver oxide zinc battery. However, the silver-zinc battery is very expensive, has short life, and is necessary complex work for maintenance. The operators needed to do full electric discharge every 15th dive, and to adjust electrolysis liquid after 30 dives. In order to supply electricity for the Shinkai 6500, two 400Ah battery pods, 800Ah in total, are installed. From 1997, the JAMSTEC Shinkai 6500 operation team, and MHI and Japan Storage Battery Co. Ltd started to develop the 400Ah capacity oil filled pressure compensated lithium-ion battery for Shinkai 6500 main batteries. And we completed development and sea trial in March 2004. The advantage of lithium ion battery in comparison with silver zinc battery is (1) maintenance-free, it is not necessary to do adjustment of electrolysis liquid. (2) long life time, the battery life time increased from 75 times or 1 year, to 180 times or 2 years, and (3) light weight, it is about 100 kg lighter than the silver zinc battery system. We will development and result of operation of introduce the first big capacity oil filled pressure compensated lithium ion battery for the Shinkai 6500.

Twin MONOS is a CMOS-based dual bit nitride storage flash memory technology which offers low cost, high performance and low power.

Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET has been developed by using a large-signal FET model. In order to achieve high efficiency in broad-band, optimum impedances at each frequency are estimated by using the large-signal FET model. The large-signal FET model is based on Angelov model. The capacitance equations of the model are improved to satisfy charge conservation. The model parameters are extracted for a unit cell FET with a small gate width. The unit cell FET model was scaled up to one chip FET model with a wide gate width, considering increase of source inductance by sharing via holes. The developed C-band internally-matched FET has achieved power-added efficiency (PAE) of over 65% across 300MHz bandwidth.

Fully overlapped lightly doped drain FOLD n-channel MOSFETs built for the purpose of improving the tradeoff between performance and reliability are discussed. Full gate overlap was achieved by using angled implants to extend LDD (lightly-doped drain) regions beneath the gate edge of devices. The dose and energy of the angled implants were varied. The parasitic overlap capacitance and series resistance as well as the reliability enhancement introduced by the FOLD structure are investigated in detail. The series resistance is shown to be strongly dependent on gate voltage, while the overlap capacitance is found to be reduced significantly by depletion of the FOLD drain regions. The corresponding reduction in hot-carrier-limited channel length more than compensates for the increase in parasitics, indicating substantial enhancement in net drive performance. >

High-performance peer-to-peer transfer between clusters will be fundamental technology base for various Grid middleware, such as large-scale data transfer in DataGrid settings, or collective communication in Grid-wide MPIs. There, two major factors are involved: on one hand network pipes with large RTT /spl times/ bandwidth typically become data-starved, resulting in bandwidth loss; on the other hand when multiple nodes on the clusters attempt simultaneous transfer, the network pipe could become saturated, resulting in packet loss which again may result in bandwidth degradation in large RTT /spl times/ bandwidth networks. By dynamically and automatically adjusting transfer parameters between the two clusters, such as the number of network nodes, number of socket stripes, we could achieve optimal bandwidth even when the network is under heavy contention. In order to arrive at a proper performance model for automated adjustment, we have conducted several simulations by which we have discovered that such automatic tuning would beneficial, but the ideal number of network pipes does not exactly match the simple transfer model of traditional peer-to-peer settings between single nodes.

The purpose of this work is to clarify the relation between dielectric film characteristics and stress migration (SM). It has been considered that the dielectric-deposition-temperature-induced stress, caused by the difference of the expansion coefficients for Al, is the main factor for SM. However, it was found that Al diffusion into dielectrics, Al recrystallization, and dielectrics flexibility are also significant for SM. It is shown that the best method of dielectrics formation against SM is depositing low-Al-diffusivity dielectrics at low temperature after stress relaxation. >

The authors describe a low-cost high-speed cache memory including a Write Back Buffer (WBB). Since the WBB is located in a cache memory, and connected with memory cells through bit-lines, memory data is copied to the WBB in 1-clock cycle. This cache memory is in a 32 bit microcontroller developed by the authors.

By disassociating from the conventional planar Nch FET structure, a new step split channel device with a new mechanism of ballistic channel hot electron (CHE) injection promises viability in future EEPROM/flash applications. The new non-planar device exhibits fast program of /spl sim/100 ns, at a maximum internal voltage of 5 V and at low currents of less than 10 /spl mu/A.

In this paper, we propose a snoop cache protocol for the WSI implementation which minimizes the accesses to the shared memory. In the modified-Keio protocol, both write-invalidate and write-update type protocols can be used according to the nature of the shared data. It also supports the simple synchronization mechanism with Fetch&Dec operation and inter-processor interrupt. Detailed simulation with practical parallel applications shows the efficiency of our protocol. Now we are constructing a prototype machine using R3000 processors to evaluate the actual performance of the protocol.

In this investigation we propose a framework suitable for parallel evaluation to meta queries in databases. Since execution of meta-objects costs high, people have never investigated such approach traditionally. Here we expect large granulation of meta-object evaluation, and outline the issue from the viewpoint of parallel processing to improve processes efficiency.

A new twin MONOS cell for high density, high speed and low power program is presented having a proposed hard bit density of 3F/sup 2/ and soft-bit density of 1.5 F/sup 2/ with 2-bit multilevel storage, program speed of

A planar channel split floating gate memory cell with an ultra short channel of

In a stack NOR flash cell, a small vertical (step) channel has been added to the conventional horizontal channel, to reduce the operating voltages for CHE injection and FN ejection. Devices and processes have been optimized based on extensive 2D simulations, with hardware results showing a 1-1.5 V reduction in the drain voltage requirement, and more than one order of magnitude increase in injection efficiency.