69 results on '"SOLOMON, PAUL"'
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2. Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
3. Performance-Based Earned Value
4. Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
5. Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate.
6. Reliability Challenges with Materials for Analog Computing
7. ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing
8. Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate.
9. Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing.
10. Parts per million CH4 chemoresistor sensors based on multi wall carbon nanotubes/metal-oxide nanoparticles
11. Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs.
12. Wireless sensors for automated control of total incombustible content (TIC) of dust deposited in underground coal mines
13. Virtual de-embedding study for the accurate extraction of Fin FET gate resistance
14. Ubiquitous Low-Cost Functionalized Multi-Walled Carbon Nanotube Sensors for Distributed Methane Leak Detection.
15. Beyond the Electrostatic Gate in a Single-Molecule Transistor.
16. Front-end-of-line quadrature-clocked voltage-dependent capacitance measurement
17. FDSOI CMOS with dual backgate control for performance and power modulation
18. Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node
19. Gate Work Function Engineering for Nanotube-Based Circuits
20. High Performance Carbon Nanotube Ring Oscillator
21. Appendix I: Success Criteria.
22. Appendix H: Technical Performance Measures.
23. Appendix A: Fundamentals of Earned Value Management.
24. Appendix B: Detailed Planning Guidance.
25. Appendix G: Allocated Requirements.
26. Appendix D: Federal Acquisition Regulation (FAR) Rule on EVMS.
27. Appendix F: Trade Studies.
28. Chapter 1: Overview of PBEV.
29. Appendix C: American National Standards Institute (ANSI)/Electronics Industries Alliance (EIA) Standard-748, Earned Value Management Systems (EVMS) Guidelines.
30. Appendix C-1: Excepts from NDIA PMSC ANSI/EIA-748-A Standard for Earned Value Management Systems Intent Guide.
31. Chapter 10: Changes to the Performance Measurement Baseline.
32. Chapter 11: Agile Methods.
33. Chapter 8: Level of Effort.
34. Chapter 13: Using PBEV to Manage Software-Intensive Development.
35. Chapter 14: Supplier Acquisition Management.
36. Chapter 5: Progress Toward Meeting Product Requirements.
37. Chapter 2: Principles and Guidelines of PBEV.
38. Chapter 12: Requirements and Earned Value.
39. Chapter 15: Moving Forward.
40. Chapter 3: Product Requirements Baseline.
41. Chapter 4: Maintain Bidirectional Traceability.
42. Chapter 9: Integrate Risk Management with EVM.
43. Chapter 6: Establish Planned Values and Allocate Budget.
44. Chapter 7: Variance Analysis.
45. Index.
46. Glossary.
47. The Quantum Metal Ferroelectric Field-Effect Transistor.
48. Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission.
49. Supply and threshold voltage optimization for low power design.
50. Investigation of Thermal Crosstalk Between SOT FETs by the Subthreshold Sensing Technique.
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