1. Analysis of Off-State Leakage properties of High Electron Mobility Transistors based on AlGaN/GaN heterostructures
- Author
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Tiancheng Gu, Shuxin Tan, and Xiangdong Luo
- Subjects
Materials science ,business.industry ,Transistor ,Wide-bandgap semiconductor ,Heterojunction ,law.invention ,Ion implantation ,law ,Etching (microfabrication) ,Logic gate ,Electrode ,Optoelectronics ,business ,Leakage (electronics) - Abstract
The off-state leakage (I off ) properties of the AlGaN/GaN high electron mobility field-effect transistors (HEMTs) was analyzed by fabricating metal-semiconductor (MES)-HEMTs and metal-insulator-semiconductor (MIS)-HEMTs. The experimental results show that off-state gate leakage (I g-off ) for MES-HEMTs is larger than the corresponding off-state drain leakage (I d-off ), which suggests that I d-off is a branch of I g-off . I off by the ion implantation isolation is nearly an order of magnitude lower than that by the ICP-etching isolation, which suggests the side wall under the gate electrode caused by the etching isolation can increase the I g-off and planar structure formed by ion implantation isolation can suppress gate leakage efficiently. A linear relationship of I d-off and I g-off for MES-HEMTs with the gate length implies that the gate area is proportional to the I g-off . This indicates that the edge effect on the I g-off can be negligible. At the same time, the estimated current with L g of 0 μm is not zero, indicating the gate metal covered isolation region participates in conduction. MIS-HEMTs can suppress I off significantly, indicating that the existence of the insulation layer can not only reduce the leakage current from effective gate electrode, but also suppress the leakage current from gate metal-covered isolation area.
- Published
- 2021