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This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The transmission lines are fabricated on a tow-resistivity silicon substrate (ρ = 10 &Ohm; · cm). TFMS lines with a thick dielectric layer (20 μm of benzocyclobutene is used here) present losses of 0.3 dB/mm at 94 GHz and 0.6 dB/mm at 220 GHz. Thus, using this technology, it will be possible to develop monolithic microwave integrated circuits on a silicon substrate. [ABSTRACT FROM AUTHOR]

This paper discusses a method used to design planar bandpass filters for millimeter-wave applications in U- and W-band frequency ranges. For technical reasons, these filters have to be implemented on silicon-based technology. So as to decrease the insertion losses levels inherent in silicon substrate, we propose a thin-film microstrip-like technology implemented on a benzocyclobutene layer. In addition, a dual-behavior resonator-based filter topology enabled us to fit a hardened specification. In association with this new topology, we employed an automated design procedure that combines both circuit and full-wave simulations. It is based on a statistical sensitivity study performed by design-of-experiment analysis. [ABSTRACT FROM AUTHOR]