49 results on '"Soda, H"'
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2. High-speed modulator-integrated DFB lasers
3. Obstacle avoidance by changing running path for an autonomous running vehicle applying visual servoing.
4. Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields.
5. CW operation of a 1.3-/spl mu/m strained quantum well laser on a graded InGaAs buffer with a GaAs substrate.
6. Low-threshold current and high-efficiency operation of electro-absorption modulator/DFB laser light source with AR-HR coating
7. Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers.
8. Analysis of the spectrum behavior below the threshold in DFB lasers.
9. GaInAsP/InP surface emitting injection lasers with short cavity length.
10. Distributed feedback laser emitting at 1.3 µm for gigabit communication systems.
11. Narrow-beam divergence 1.3-/spl mu/m multiple-quantum-well laser diodes with monolithically integrated tapered thickness waveguide.
12. Data-rate dependence of suppression of reflection-induced intensity noise in Fabry-Perot semiconductor lasers.
13. Polarization dependence of photo-detection in strained multiple quantum-well semiconductor lasers.
14. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate.
15. Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers.
16. Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers.
17. Proposal for quantum-dot electroabsorption modulator.
18. Strongly improved frequency response at high-optical input powers from InGaAsP compensated strain MQW electroabsorption modulators.
19. InGaAs strained MQW ridge Waveguide laser with wide bandgap InGaP clad layer at 1.3 μm
20. Beam propagation analysis of ridge waveguide structure MQW tapered thickness and width spot-size tra
21. High-efficiency pin photo-diodes with a spot-size converter for 40 Gb/s transmission systems
22. Tapered thickness waveguide InGaAsP/InP BH MQW lasers
23. 1.07 μm (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser
24. CW operation of a 1.3-μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate
25. Optimum asymmetric mirror facets structure for high efficiency semiconductor lasers
26. Human plasmas
27. Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source
28. Effective carrier recombination coefficient of 1.3 μm strained-layer quantum-well lasers
29. Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields
30. 1.3 μm InGaAsP/InP strained-layer MQW lasers fabricated by reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition
31. Compact 10Gbps InP-Based Waveguide Modulator.
32. Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source.
33. 1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser.
34. Optimum asymmetric mirror facets structure for high efficiency semiconductor lasers.
35. New technologies toward high performance 1.3 /spl mu/m strained-quantum well laser.
36. Narrow beam tapered thickness waveguide integrated BH MQW laser operation at high temperatures.
37. High T/sub 0/ 1.3 /spl mu/m InGaAs strained single quantum well laser with InGaP wide band-gap clad layers.
38. 1.3 /spl mu/m InGaAsP/InP strained-layer MQW lasers fabricated by reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition.
39. High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique.
40. Tapered thickness MQW waveguide BH MQW lasers.
41. High-efficiency pin photo-diodes with a spot-size converter for 40 Gb/s transmission systems.
42. High temperature operation of 1.3 /spl mu/m tapered-thickness waveguide lasers with pn current-blocking layers.
43. Tapered thickness waveguide InGaAsP/InP BH MQW lasers.
44. Modulation schemes for multi-gigabit optical transmission systems.
45. Human plasmas.
46. Acoustic characterization of metals with long needle grains.
47. InGaAs strained MQW ridge Waveguide laser with wide bandgap InGaP clad layer at 1.3 /spl mu/m.
48. Effective carrier recombination coefficient of 1.3 /spl mu/m strained-layer quantum-well lasers.
49. Beam propagation analysis of ridge waveguide structure MQW tapered thickness and width spot-size tra.
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