1. Effect of boron-doping on transparent conducting Al doped ZnO films for thin film solar cells
- Author
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Sung-Hwan Choi, Min-Koo Han, Heon-Min Lee, Taeho Moon, Seung-Hee Kuk, and Dong-Won Kang
- Subjects
Materials science ,chemistry ,Hall effect ,Chemisorption ,Electrical resistivity and conductivity ,Doping ,X-ray crystallography ,Analytical chemistry ,chemistry.chemical_element ,Thin film ,Boron ,Transparent conducting film - Abstract
Al-doped ZnO (AZO) films with different boron (B) content have been prepared on glass substrates by co-sputtering of AZO (2wt. % Al 2 O 3 ) and B-doped ZnO (BZO, 3wt. % B 2 O 3 ) targets at room temperature. The B content in the B-doped AZO (BAZO) film was controlled by DC power on BZO target. X-ray diffraction analysis indicated that the B-doping improved the crystalline structure of AZO film. Hall measurement analysis showed that resistivity of BAZO films was lowered to 2.06×10−3 Ω·cm, whereas that of AZO film was 5.68×10−3 Ω·cm. Hall mobility of AZO film was improved with appropriate B-doping, and carrier concentration was increased with B-doping due to B activation as a donor.
- Published
- 2010