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Phase change memory (PCM) formed by Ge2Sb2Te5 (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small contact size of the CNT to the phase change material, a significant reduction in programming power is achieved compared to metal contact at the same via size. The temperature simulation result shows that the CNT filled via helps to reduce the programming area. The fabricated PCM on CNT filled via is able to endure more than 104 SET/RESET cycles without observable degradation.

In order to improve the safety of underwater pipeline crawler in underwater operation and perfect its structural design, the stability of underwater pipeline crawler was studied. Firstly, the process of clamping the pipe with the clamping device of the crawler was divided into two stages: the clamping stage and the loading stage. Then the dynamic analysis was carried out, and the strength check of the V-shaped fixtures was accomplished. At last, the analysis results were summarized. The crawler mainly provides a platform for underwater pipeline operation equipment, which can be equipped with different equipment according to demand, providing convenience for underwater pipeline operation. Through simulation analysis and experimental verification have shown that the crawler meets the security requirements of underwater pipeline operations.

Via scaling at a given CNT synthesis process is evaluated in terms of resistance variation among vias. As the underlying source of resistance variation, the relation between CNT diameter distribution and the catalyst thickness is characterized. CNT resistance model is used to predict via resistance from CNT structures in a via. Catalyst thickness scaling scheme considering CNT diameter variation is proposed.

Although CMOS compatible CNT process in interconnect technology has been proposed [1], integration to a working active device has yet to be demonstrated. CNT synthesis in existing works employ the use of Ti-based substrate using Ni catalyst [2]. Nevertheless, the use of CNTs as MOSFET contact plugs in advanced technology node require the synthesis of CNTs on nickel silicided (NiSi) source and drain region [3]. Thus, in this paper, a CMOS compatible integration process of CNT contact plug to a MOSFET is proposed. The challenge of growing CNT from NiSi substrate is addressed using interfacial layer using Ni based catalyst. The performance of CNT vias integrated with a MOSFET is evaluated in terms of via resistance and IV characteristics.

We studied the electron conduction mechanisms in h-BN when it is used as a gate dielectric material for semiconductor devices. Experimental results show that electron hopping, in addition to Fowler Nordheim tunnelling, provide an extra conduction mechanism compared to traditional dielectric materials. Using density functional theory (DFT) based first principle calculation to examine the electronic structure in hBN layers with defects, the transition between the two different conducting mechanisms is identified.

Carbon Nanotubes (CNTs) with wall density of 5.3×1012cm-2 are synthesized on NiSi at 450°C by using Ti barrier layer and multilayer Ni/Al/Ni catalyst. Based on this synthesis process, sub-micron CNT vias are fabricated, with via resistance of 47 Ωμm2. Resistance trend of scaling CNT via is presented to shows prospect of CNT vias for advanced technology node.

The contact property between Ge 2 Sb 2 Te 5 (GST) with vertical carbon nanotubes (CNTs) is studied in this work. By careful catalyst design and process optimization, we have demonstrated the formation of ohmic contact between the CNT and the GST material. The developed process is CMOS compatible and can be used for form phase change memory over the vias in the interconnect layers.

The application of carbon-nanotube to reduce interconnect delay is studied in this work, with the emphasis on how it can be used to reduce the inter-metal capacitance. By forming vertically aligned cylindrical pores assisted by vertically grown CNT, mechanically stable ultra-low-k interlayer dielectric with k-value down to 1.89 is experimentally demonstrated. Ways to integrate this process will other CNT enhanced interconnect technology are also discussed.

This paper describes the potential of using carbon nanotube (CNT) as a via-filling material to enhance the performance mainstream CMOS technology. Due to the CMOS compatibility constraint, the choice of catalyst material and processing conditions have been significantly limited. After a careful selection process, Ni is found to be a workable material. Through catalyst engineering, we have demonstrated that it is possible to form CNT filled vias on metal or silicide substrate at low temperature with low contact resistance. The impact of via dimensions and processing condition has also been studied. Based on statistical analysis using measured data, the best-case projected via resistance for a 30nm via is 295Ω, which is within one order of magnitude of its copper and tungsten counterparts.

Dopamine is a neurotransmitter that plays a key role in neural disorders. This paper reports on the design and fabrication of a microelectrode array (MEA) modified with multi-walled carbon nanotubes (MWCNTs) to detect dopamine with high sensitivity. The modification is based on covalent bonding of carboxylic groups in carbon nanotubes (CNTs) and amine groups in poly-l-lysin (PLL). The modified microelectrode array was characterized by Raman spectroscopy and electrochemical impedance spectroscopy (EIS). The CNT-coated MEA shows a sensitivity of 1186 nA/μM·mm 2 ·(V/s) 0.5 in dopamine detection. This enhanced sensitivity suggests that CNT-coated MEA is a promising platform for in vitro high-throughput, high sensitivity neurotransmitter detection.