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The major two demands against electronic devices are smaller dimension and higher performance (higher data rate). In terms of packaging technology, flip chip interconnection is one of the currently available solutions that meet those demands by providing high density and low inductance interconnection between chip and system. However, this technology has a limit for fine pitch, which should be ~10um. As an alternative to achieve finer pitch interconnection, we have investigated bumpless interconnection. In this research, we have succeeded in bonding a Si chip to a flexible substrate. Flexible substrates will enable electronic devices become smaller, and are already used for mobile applications in a large volume. A shortcoming of high-density interconnection is that, cross talk noise will become dominant as the spacing between adjacent signal lines will become smaller. To avoid this problem, we have applied a pair line transmission line structure for the interconnection. We got the electrical performance of 3GHz pulse frequency through as many as 196 bumpless interconnections of daisy chain on this experimental system.

We report on experiments with high-power femtosecond pulses from a passively mode-locked thin disk Yb:YAG laser: nonlinear fiber compression to 33 fs with 18 W average power and a fiber-feedback parametric oscillator generating 15 W in the 1.5-/spl mu/m region.

This paper describes abnormal sound detection in plant equipment. Their target was to detect steam leakages, which is one of the most important indications of power plant failure in its early stages. Fourier analysis, which is a conventional method for the sound processing, cannot detect small abnormal sounds mixed with large normal sounds. The authors focus on the characteristics of adaptive digital filters (ADF), which enhance a small signal in a large background noise, and propose an abnormal sound detection method by comparing the properties between normal and abnormal filters produced by the ADF process. Finally, they show the efficiency of this method by applying it to sounds recorded in a power plant. The results of its application to sound source detection are also reported.

The effects of absorbed water of spin-on glass (SOG) and tetraethylorthosilicate (TEOS)-O/sub 3/ NSG on MOS transistor hot carrier degradation were investigated. It was found that the absorbed water in SOG and TEOS-O/sub 3/ NSG film desorbs from the film during subsequent low temperature annealing and causes hot carrier degradation. It was also found that plasma CVD silicon oxide (P-SiO) deposited under certain conditions suppresses the hot carrier degradation drastically. Because the P-SiO film has a small water absorption rate, it blocks water penetration to the silicon surface. >

This paper proposes a Tabu search based method for power system unit commitment. Tabu search is an efficient combinational optimization method. In this paper, the restricted neighborhood of the solution search is investigated to improve its performance. The proposed method is applied to a unit commitment problem. Finally, a comparison is made between the proposed method and simulated annealing.

In sub-half micron CMOS, reduction of wiring capacitance is a key issue to improve the circuit performance because the ratio of wiring delay to total delay is increasing. In order to reduce the wiring capacitance, applying low dielectric materials to ULSI is most effective and developments of low dielectric materials have been reported recently. However, there have been no studies of applying those to sub-half micron CMOS. In this study, it is reported for the first time that the new low dielectric material "SiOF" which has been proposed previously has been applied to sub-half micron CMOS and the improvement of circuit performance has been confirmed. Moreover, it is clearly demonstrated that the SiOF film is inevitable to improve the circuit speed of 0.35 /spl mu/m CMOS with the scaling trend. Also, it is emphasized that the reduction of wiring capacitance with SiOF film is important from the viewpoint of power reduction in sub-half micron CMOS. >

Laser processing on a silicon plate was observed. A free running flashlamp pumped Ti:sapphire laser was used. A pair of PIN detectors was useful for the detection of penetration. The photographs of keyhole were taken by laser microscopy.

Previously, we reported a silicon torsional resonant mirror driven by a PZT plate through link beam leverage effects and confirmed the device operation. Our device is mechanically reliable and stable since there are no metal leads on the vibrating silicon torsional beams and the mirror is supported by 6 beams. We present an improved device having much higher performance through both design and process optimization based on detailed FEM simulations and refinement of the fabrication process.

In high frequency transmission, crosstalk toward neighbor lines increases because of the strong behavior of electric and magnetic field. In this paper, we present a new transmission structure especially focused on the bus between CPU and memory for high frequency range. And we confirm the superiority of new structure through measurement and simulation study in terms of electromagnetic field analysis.

Summary form only given. Periodically-poled LiNbO/sub 3/ (PPLN) has been widely used for quasi-phase-matched (QPM) nonlinear optical frequency conversion because of its large nonlinear coefficient, high optical quality, and its availability as a large diameter wafer. Here we demonstrate that diffusion-bonding of both the PPLN and single domain LN wafers is also an effective way to increase the effective aperture of PPLN. The diffusion-bonded PPLN was used for a QPM-OPO, and 2.35 mJ signal energy at 1.6 /spl mu/m was obtained with a high conversion efficiency (=38% slope efficiency) and good beam quality.