42 results on '"Tang, Zhikai"'
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2. Method of Altitude Measurement in the VHF Radar Based on Spatial Smoothing by Autocorrelation and Cross-Correlation Matrix
3. An Evaluation Method on Radar Emitter Signal Recognition Effect Based on SVM
4. Simulation and design of injection locking oscillator
5. Method of Altitude Measurement in the VHF Radar Based on Spatial Smoothing by Autocorrelation and Cross-Correlation Matrix
6. Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET
7. Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance
8. Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
9. Study on Natural Frequencies Tuning Method of Nearest-Neighbor Coupled Oscillators
10. Analysis of Settling Time of One Dimension Nonlinear Antenna Array
11. A Coupled Oscillator Array with its Application in Null Directions Forming
12. Low Profile, Low Cost and High Efficiency Phased Array
13. A New Method in DFD Design
14. Injection Locking Phenomena of Van der Pol Oscillator
15. Low profile, low cost and high efficiency phased array for automobile radar and communication systems
16. Adaptive Direction Detection in Deterministic Interference and Partially Homogeneous Noise.
17. Analysis of oscillator array dynamics for phase-shifteriess ream-scanning
18. Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
19. Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
20. Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies
21. Recent development in flourine-ion-implanted GaN-based heterojunction power devices
22. Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.
23. 600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation.
24. Study on Natural Frequencies Tuning Method of Nearest-Neighbor Coupled Oscillators.
25. Low profile, low cost and high efficiency phased array for automobile radar and communication systems.
26. Analysis of oscillator array dynamics for phase-shifterless beam-scanning.
27. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.
28. A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.
29. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.
30. Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation.
31. Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier.
32. Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer.
33. High-fMAX High Johnson's Figure-of-Merit 0.2- \mum Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation.
34. High-Quality Interface in Al2O3/GaN/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation.
35. 600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse.
36. High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/ \SiNx Passivation.
37. Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges.
38. Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier”.
39. A coupled oscillator array with its application in null directions forming.
40. Injection locking phenomena of Van der Pol oscillator.
41. Low profile, low cost and high efficiency phased array.
42. A new method in DFD design.
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