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Your search keyword '"Triantopoulos, K."' showing total 7 results
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7 results on '"Triantopoulos, K."'

1. Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Author

Chasin, A., primary, Franco, J., additional, Triantopoulos, K., additional, Dekkers, H., additional, Rassoul, N., additional, Belmonte, A., additional, Smets, Q., additional, Subhechha, S., additional, Claes, D., additional, van Setten, M. J., additional, Mitard, J., additional, Delhougne, R., additional, Afanas'ev, V., additional, Kaczer, B., additional, and Kar, G. S., additional

Published
2021
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2. RF Performance of a Fully Integrated 3D Sequential Technology

Author

Garros, X., primary, Lacord, J., additional, Triantopoulos, K., additional, Andrieu, F., additional, Ghibaudo, G., additional, Gaillard, F., additional, Lugo-Alvarez, J., additional, Brunet, L., additional, Youcef, R. Nait, additional, Batude, P., additional, Fenouillet-Beranger, C., additional, Casse, M., additional, Sklenard, B., additional, and Scheiblin, P., additional

Published
2019
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3. Shaping circuit environment to face the thermal challenge Innovative technologies from low to high power electronics

Author

Coudrain, P., primary, Colonna, J.-P., additional, Collin, L.-M., additional, Prieto, R., additional, Frechette, L.G., additional, Barrau, J., additional, Savelli, G., additional, Vivet, P., additional, Struss, Q., additional, Widiez, J., additional, Vladimirova, K., additional, Triantopoulos, K., additional, Beckrich-Ros, H., additional, Vilarrubi, M., additional, Laguna, G., additional, Azarkish, H., additional, Shirazi, M., additional, and Michailos, J., additional

Published
2018
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5. Thermal effects in 3D sequential technology

Author

Triantopoulos, K., primary, Casse, M., additional, Brunet, L., additional, Batude, P., additional, Fenouillet-Beranger, C., additional, Mathieu, B., additional, Vinet, M., additional, Ghibaudo, G., additional, and Reimbold, G., additional

Published
2017
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7. Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K.

Author

Triantopoulos, K., Casse, M., Barraud, S., Haendler, S., Vincent, E., Vinet, M., Gaillard, F., and Ghibaudo, G.

Subjects
*METAL oxide semiconductor field-effect transistors, *TRANSISTORS, *THERMAL resistance, *THERMAL conductivity, *FIELD-effect transistors, *LOW temperatures
Abstract

Self-heating in fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is experimentally studied using the gate resistance thermometry technique, in a wide temperature range from 300 down to 4.2 K. We demonstrate that below 160 K, the channel temperature increase ($\Delta {T}$) due to self-heating starts to deviate significantly from the linear variation with the dissipated power, leading to an apparent power dependent thermal resistance. This power dependence is interpreted in terms of temperature dependent thermal conductivity. The thermal resistance dependence on the active device temperature (${T}_{\text {Device}}$) indicates that the former one is mainly driven by the thermal conductivity of the oxide layer. Moreover, based on this dependence we reconstructed the channel temperature increase for each dissipated power and ambient temperature, and we found that the calculated values were in a good agreement with the experimental ones. Results indicate that even at low temperatures, thermal resistance does not depend significantly on the silicon channel thickness (ranging from 7 up to 24 nm), whereas the buried-oxide thinning (145 and 25 nm) strongly reduces the magnitude of the thermal resistance. Finally, this paper intends to fill the gap of experimental data concerning self-heating in advanced FDSOI transistors at low temperatures, revealing limitations and perspectives that should be taken into account for future work. [ABSTRACT FROM AUTHOR]

Published
2019
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