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15. Series connection of IGBT

Author

Van Nguyen, The, primary, Jeannin, Pierre-Olivier, additional, Vagnon, Eric, additional, Frey, David, additional, and Crebier, Jean-Christophe, additional

Published
2010
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16. Series Connection of IGBTs With Self-Powering Technique and 3-D Topology.

Author

Van Nguyen, The, Jeannin, Pierre-Olivier, Vagnon, Eric, Frey, David, and Crebier, Jean-Christophe

Subjects
INSULATED gate bipolar transistors, ELECTRIC circuits, ELECTRIC switchgear, ELECTRIC current converters, INTEGRATED circuit interconnections, ELECTRIC potential, ELECTRICAL engineering, VOLTAGE regulators, POWER semiconductors
Abstract

This paper analyzes the effects of parasitic capacitances in the series connection of insulated-gate bipolar transistors (IGBTs) on their voltage sharing. These parasitics exist naturally due to gate driver interconnects and power circuit physical architecture. Two solutions, which can be combined, are proposed to minimize these effects in order to achieve a better voltage balancing. The first one is based on gate driver self-powering technique. The second one is based on a vertical structure assembly of IGBTs connected in series. The performance offered by these two complementary solutions is investigated and validated on a series connection of three IGBTs in a chopper converter. Both simulation and experimental results show the effectiveness of our approaches. [ABSTRACT FROM AUTHOR]

Published
2011
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17. A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

Author

Yvan Avenas, Kevin Guepratte, P. O. Jeannin, J. C. Crebier, Eric Vagnon, Vagnon, Eric, Laboratoire de Génie Electrique de Grenoble (G2ELab), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, power/drive interaction, Busbar, packaging, 02 engineering and technology, 7. Clean energy, Electromagnetic interference, Chip on Chip approach, EMI, component, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, radiated field, business.industry, Buck converter, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, Electrical engineering, Three-dimensional integrated circuit, 020206 networking & telecommunications, Power (physics), electrostatic analisys, press pack implementation, Power module, Logic gate, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

The paper focuses on a new generation of power modules, trying to optimize the tradeoff between thermal and EMI managements. At the same time, the packaging approach is considered in order to simplify the implementation of the power dies while improving the reliability of the structure. The approach considers the hybrid integration of the power dies, one on top of the other into a 3D Chip On Chip configuration. Thanks to this structure, the power dies can be directly inserted within electrical plates, the whole structure emulating a busbar like power module. The paper presents the characteristics and the benefits of the approach. Then, it focuses on the practical characterization of two prototypes: a buck converter structure and a full bridge, single phase diode rectifier. Both of them are based on double sided thermal cooling and electro-thermal contacts are obtained by pressure. The prototypes exhibit great performances while offering really reduced parasitic and EMI coupling.

Published
2009

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