23 results on '"Verreck, Devin"'
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2. Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg
3. Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
4. Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage.
5. Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel
6. Sources of variability in scaled MoS2 FETs
7. Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current
8. Device and Circuit Level Gate Configuration Optimization for 2D Material Field-Effect Transistors
9. Improvement of conduction in 3-D NAND memory devices by channel and junction optimization
10. Impact of Mechanical Stress on 3-D NAND Flash Current Conduction.
11. Calibration of the high-doping induced ballistic band-tails tunneling current in In0.53Ga0.47As Esaki diodes
12. Interconnect-Device Co-Optimization for Field-Effect Transistors with Two-Dimensional Materials
13. Calibration of the high-doping induced ballistic band-tails tunneling current with In0.53Ga0.47As Esaki diodes
14. Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors
15. Tunnel FETs for low power electronics
16. The Role of Nonidealities in the Scaling of MoS2 FETs.
17. High-current InP-based triple heterojunction tunnel transistors
18. Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
19. Uniform Strain in Heterostructure Tunnel Field-Effect Transistors.
20. Split pocket p-n-i-n tunnel field-effect transistors.
21. Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs.
22. Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors.
23. Corrections to “Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors”.
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