1. InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure
- Author
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Wen-Hui Chiou, Wen-Chau Liu, Xin-Da Liao, Hung-Ming Chuang, Chia Yun Chen, Chih-Kai Wang, C.T. Lu, Kuan-Ming Lee, and Sheng-Fu Tsai
- Subjects
Materials science ,Input offset voltage ,Heterostructure-emitter bipolar transistor ,business.industry ,Heterojunction bipolar transistor ,Bipolar junction transistor ,Heterojunction ,chemistry.chemical_compound ,chemistry ,Indium phosphide ,Breakdown voltage ,Optoelectronics ,business ,Common emitter - Abstract
The DC performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BV/sub CEO/ of 9.2 V are obtained. Furthermore, the abrupt junction and /spl delta/-doping structure can eliminate the carrier blocking effect effectively when electrons are transported across the base-collector heterojunction. Meanwhile, the DC current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.
- Published
- 2003
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