1. Half pitch 14 nm direct pattering with Nanoimprint lithography
- Author
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Yong-Taik Kim, Hirokazu Kato, S. Inoue, Motofumi Komori, Hirotaka Tsuda, Kei Kobayashi, A. Mitra, K. Matasunaga, Hiroshi Tokue, Sachiko Kobayashi, Masanobu Saito, Tetsuro Nakasugi, T. Imamura, Wooyung Jung, Takeharu Motokawa, Tatsuhiko Higashiki, T. Komukai, Kazuya Fukuhara, J. Cho, Masamitsu Itoh, Masayuki Hatano, K. Takahata, Shingo Kanamitsu, Takuya Kono, and Kohji Hashimoto
- Subjects
Materials science ,business.industry ,02 engineering and technology ,Overlay ,021001 nanoscience & nanotechnology ,01 natural sciences ,Nanoimprint lithography ,law.invention ,010309 optics ,Resist ,law ,0103 physical sciences ,Multiple patterning ,Multi field ,Optoelectronics ,Wafer ,0210 nano-technology ,business ,Throughput (business) - Abstract
We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ( $3\sigma$ ) and the template life around 125 lots. Throughput of 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) and multi field dispense (MFD). The hp 14 nm template was fabricated by a self-aligned double patterning (SADP) on a template. Using this template, we fabricated hp 14 nm dense Si lines with a depth of 50 nm on a 300 mm wafer.
- Published
- 2018
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